ʻO ka mea kiʻekiʻe refractory ceramic mea 3YSZ, a i ʻole ka mea hiki iā mākou ke kapa i ka tetragonal zirconia polycrystal (TZP), i hana ʻia me ka zirconium oxide i hoʻopaʻa ʻia me 3% mol yttrium oxide.

ʻO kahi pūhui non-metallic i haku ʻia me ke silika a me ka nitrogen, silicon nitride (Si3N4) he mea hoʻomaʻamaʻa kiʻekiʻe loa me ka hui ʻoi loa o ka mīkini, wela, a me nā waiwai uila. Hoʻohui ʻia, i hoʻohālikelike ʻia i ka hapa nui o nā seramika ʻē aʻe, he seramika hana kiʻekiʻe me ka hoʻonui haʻahaʻa haʻahaʻa haʻahaʻa e hāʻawi ana i ke kūpaʻa haʻalulu wela.

He pōkole ʻo Pyrolytic BN a i ʻole PBN no ka pyrolytic boron nitride. He ʻano ia o ka boron nitride hexagonal i hana ʻia e ke ʻano hoʻoheheʻe kemika (CVD), ʻo ia hoʻi kahi boron nitride maʻemaʻe loa e hiki ke piʻi aku ma mua o 99.99%, ʻaneʻane ʻaʻohe porosity.

ʻO Silicon carbide (SiC) kahi mea seramika i ulu pinepine ʻia e like me ke aniani hoʻokahi no nā noi semiconductor. Ma muli o kāna mau waiwai waiwai a me ka ulu ʻana o ka kristal hoʻokahi, ʻo ia kekahi o nā mea semiconductor lōʻihi loa ma ka mākeke. ʻOi aku ka lōʻihi ma mua o kāna hana uila.

ʻO nā seramika Boron Nitride (BN) kekahi o nā seramika ʻenehana maikaʻi loa. Hoʻohui lākou i nā waiwai kūʻokoʻa wela, e like me nā conductivities thermal kiʻekiʻe, me ka ikaika dielectric kiʻekiʻe a me ka inertness kemika kūikawā e hoʻoponopono ai i nā pilikia i kekahi o nā wahi noi noi nui loa o ka honua.

ʻO nā substrate i hana ʻia me ka seramika kiʻiʻoniʻoni lahilahi i kapa ʻia he mau mea semiconductor. Hana ʻia ia me nā ʻāpana lahilahi i kūkulu ʻia me ka hoʻohana ʻana i ka uhi ʻana i ka ʻūhā, ka waiho ʻana, a i ʻole nā ​​ʻano sputtering. ʻO nā lau aniani me ka mānoanoa o lalo o hoʻokahi millimeter ʻelua-dimensional (flat) a i ʻole ʻekolu-dimensional i manaʻo ʻia he substrate seramika kiʻiʻoniʻoni lahilahi. Hiki iā lākou ke hana ʻia mai kahi v

ʻOiai ua hui pū ʻo Si3N4 i ka conductivity thermal maikaʻi loa a me ka hana mechanical. Hiki ke kuhikuhi ʻia ka conductivity thermal ma 90 W/mK, a ʻo kona paʻakikī haʻihaʻi ka mea kiʻekiʻe loa ma waena o nā seramika i hoʻohālikelike ʻia. Hōʻike kēia mau hiʻohiʻona e hōʻike ʻo Si3N4 i ka hilinaʻi kiʻekiʻe loa ma ke ʻano he substrate metala.

ʻO nā seramika Boron nitride ka ikaika kupaianaha a me ka hana wela i kūpaʻa maikaʻi, e hana ana iā lākou i koho kūpono no ka hana ʻana i nā nozzles i hoʻohana ʻia i ka atomization o ka metala hehee.

ʻO ka Boron Carbide (B4C) kahi mea paʻa paʻa i haku ʻia me Boron a me ke kalapona. ʻO Boron Carbide kekahi o nā mea paʻakikī loa i ʻike ʻia, ʻo ke kolu ma hope o ka cubic Boron nitride a me ke daimana. He mea covalent ia i hoʻohana ʻia i nā ʻano noi koʻikoʻi, e komo pū me nā mea kaua tank, nā pale pale pale, a me nā pauka sabotage engine. ʻO kaʻoiaʻiʻo,ʻo ia ka mea i makemakeʻia no nāʻanoʻoihanaʻoihana likeʻole

Kiʻekiʻe thermal conductivity a me ka haʻahaʻa coefficient o ka wela hoʻonui. Hāʻawi kēia hui pū ʻana o nā waiwai i ke kū kūʻokoʻa o ka haʻalulu wela, e hana ana i nā seramika Silicon Carbide e pono ai i nā ʻano ʻoihana. He semiconductor hoʻi ia a ʻo kāna mau waiwai uila e kūpono ia no ka nui o nā noi. Ua ʻike ʻia ʻo ia no kona paʻakikī loa a me ka pale ʻana i ka corrosion.