I-Silicon carbide (i-SiC) iyimpahla ye-ceramic evame ukutshalwa njengekristalu eyodwa yezinhlelo zokusebenza ze-semiconductor. Ngenxa yezakhiwo zayo zemvelo kanye nokukhula kwekristalu eyodwa, ingenye yezinto ezihlala isikhathi eside ze-semiconductor emakethe. Lokhu kuqina kwedlula kude ukusebenza kwawo kagesi.

Izitsha zobumba ze-Boron Nitride (BN) ziphakathi kwezitsha zobumba ezisebenza kahle kakhulu zebanga lobuchwepheshe. Ahlanganisa izici ezihlukile ezimelana nezinga lokushisa, njengama-thermal conductivity aphezulu, namandla aphezulu e-dielectric kanye nokungangeni kwamakhemikhali okukhethekile ukuze kuxazululwe izinkinga kwezinye zezindawo zokufaka izicelo ezidinga kakhulu emhlabeni.

Ama-substrates enziwe nge-ceramic yefilimu emincane abuye abizwe ngokuthi yizinto ze-semiconductor. Yakhiwe ngezingqimba eziningi ezincanyana ezakhiwe kusetshenziswa i-vacuum coating, deposition, noma izindlela zokufafaza. Amashidi engilazi anogqinsi olungaphansi kwemilimitha eyodwa anohlangothi olubili (flat) noma ama-dimensional amathathu athathwa njengama-substrates e-ceramic efilimu encane. Zingakhiqizwa kusuka ku-v

Ngenkathi i-Si3N4 ihlanganisa ukusebenza kahle kwe-thermal nokusebenza komshini. I-thermal conductivity ingacaciswa ku-90 W/mK, futhi ukuqina kwayo kokuphuka kuphezulu kakhulu phakathi kwezitsha zobumba eziqhathanisiwe. Lezi zici ziphakamisa ukuthi i-Si3N4 izokhombisa ukwethembeka okuphezulu kakhulu njenge-metalized substrate.

I-Boron nitride ceramics inamandla amangalisayo nokusebenza okushisayo okuzinze ngokuphawulekayo, okuwenza abe yinketho ekahle yokwenza imibhobho esetshenziswa ekwenzeni i-athomu yensimbi encibilikisiwe.

I-Boron Carbide (B4C) iyi-ceramic eqinile eyakhiwe i-Boron ne-carbon. I-Boron Carbide ingenye yezinto ezilukhuni kunazo zonke ezaziwayo, ikleliswe endaweni yesithathu ngemuva kwe-cubic Boron nitride nedayimane. Kuyimpahla ehambisanayo esetshenziswa ezinhlelweni ezahlukahlukene ezibalulekile, kufaka phakathi izikhali zethangi, amavesti angangenwa izinhlamvu, kanye nezimpushana zokubhubhisa injini. Eqinisweni, iyinto ekhethwayo yezinhlelo zokusebenza ezihlukene zezimboni

I-conductivity ephezulu ye-thermal kanye ne-coefficient ephansi yokwandisa okushisayo. Le nhlanganisela yezakhiwo inikeza ukumelana nokushaqeka okushisayo, okwenza izitsha zobumba zeSilicon Carbide zibe usizo ezinhlobonhlobo zezimboni. Iphinde ibe yi-semiconductor futhi izakhiwo zayo zikagesi ziyenza ifanelekele uhla olubanzi lwezinhlelo zokusebenza. Yaziwa nangobulukhuni bayo obudlulele kanye nokumelana nokugqwala.

I-Aluminium nitride inomthamo ophezulu we-thermal conductivity (170 W/mk, 200 W/mk, kanye no-230 W/mk) kanye nokumelana nevolumu ephezulu namandla e-dielectric.

Ukushaqeka okushisayo kuvame ukuba imbangela eyinhloko yokwehluleka ezinhlelweni zokushisa eziphezulu. Yakhiwe izingxenye ezintathu: ukunwetshwa kwe-thermal, ukuqhutshwa kwe-thermal, namandla. Ukushintsha kwezinga lokushisa okusheshayo, kokubili phezulu naphansi, kubangela ukwehluka kwezinga lokushisa ngaphakathi kwengxenye, okufana nokuqhekeka okubangelwa ukuhlikihla i-ice cube engilazini eshisayo. Ngenxa yokwandiswa nokufinyela okuhlukahlukene, ukunyakaza

Imboni yezimoto ihambisana nokuqamba okusha ngokusebenzisa izitsha zobumba ezithuthukisiwe ukwenza izinguquko ezithuthukisa ukusebenza kuzo zombili izinqubo zokukhiqiza kanye nezingxenye ezithile zezimoto zesizukulwane esisha.