I-Hexagonal Boron Nitride ceramic iyinto ekwazi ukumelana kahle kakhulu nezinga lokushisa eliphezulu kanye nokugqwala, ukuguquguquka okuphezulu kwe-thermal, kanye nezakhiwo eziphakeme zokufakelwa, inesithembiso esihle sokuthuthuka.

Ngenxa ye-thermal conductivity ekahle ye-beryllium oxide ceramic, iyasiza ekuthuthukiseni impilo yesevisi kanye nekhwalithi yamadivayisi, ukusiza ukuthuthukiswa kwamadivayisi ku-miniaturization kanye nokwandisa amandla amadivayisi, ngakho-ke, ingasetshenziswa kabanzi ku-aerospace, amandla enuzi. , ubunjiniyela bensimbi, imboni ye-elekthronikhi, ukukhiqizwa kwamarokhethi, njll.

Izitsha zobumba ze-Aluminium Nitride zinokusebenza okuhle kakhulu sekukonke, zilungele ama-semiconductor substrates nezinto zokupakisha zesakhiwo, futhi zinamandla amakhulu okusebenza embonini yezogesi.

I-Si3N4 ibonwa njengento engcono kakhulu ye-ceramic substrate ene-conductivity ephezulu yokushisa nokuthembeka okuphezulu ekhaya naphesheya. Nakuba i-thermal conductivity ye-Si3N4 ceramic substrate iphansi kancane kunaleyo ye-AlN, amandla ayo aguquguqukayo kanye nokuqina kokuphuka kungafinyelela ngaphezu kokuphindwe kabili kwe-AlN. Ngaleso sikhathi, i-thermal conductivity ye-Si3N4 ceramic iphakeme kakhulu kunaleyo ye-Al2O3 c.

Kusukela ngekhulu lama-21, izitsha zobumba ezingangenwa izinhlamvu zithuthuke ngokushesha ngezinhlobo eziningi, okuhlanganisa i-Alumina, i-Silicon Carbide, i-Boron carbide, i-silicon Nitride, i-Titanium Boride, njll. Phakathi kwazo, i-Alumina Ceramics (Al2O3), i-Silicon Carbide ceramics (SiC) kanye ne-Boron Carbide Ceramics. (B4C) yizona ezisetshenziswa kakhulu.