I-Aluminium Nitride (AlN) yaqala ukwakhiwa ngo-1877, kodwa ukusetshenziswa kwayo okungenzeka ku-microelectronics akuzange kukhuthaze ukuthuthukiswa kwezinto ezisezingeni eliphezulu, ezihwebayo kuze kube maphakathi nawo-1980.

I-AIN iwuhlobo lwe-aluminium nitrate. I-Aluminium nitride ihlukile ku-aluminiyamu nitrate ngoba iyinhlanganisela ye-nitrogen enesimo esithile se-oxidation esingu--3, kuyilapho i-nitrate ibhekisela kunoma iyiphi i-ester noma usawoti we-nitric acid. Isakhiwo sekristalu sale nto siyi-wurtzite ene-hexagonal.

Ukuhlanganiswa kwe-AIN

I-AlN ikhiqizwa ngokuncishiswa kwe-carbothermal ye-alumina noma nge-nitridation eqondile ye-aluminium. Inokuminyana okungu-3.33 g/cm3 futhi, naphezu kokungancibiliki, iyahlukana emazingeni okushisa angaphezu kuka-2500 °C kanye nomfutho womkhathi. Ngaphandle kosizo lwezithasiselo ezenza uketshezi, i-material iboshelwe ngokuhlanganyela futhi imelana ne-sintering. Ngokuvamile, ama-oxide afana ne-Y2O3 noma i-CaO avumela ukucwiliswa emazingeni okushisa aphakathi kuka-1600 no-1900 degrees Celsius.

Izingxenye ezenziwe nge-aluminium nitride zingenziwa ngezindlela ezihlukahlukene, okuhlanganisa ukucindezela okubandayo kwe-isostatic, ukubunjwa komjovo we-ceramic, ukubunjwa komjovo we-low-pressure, ukusakaza kwe-tape, ukunemba kwemishini, nokucindezela okomile.

Izici Eziyinhloko

I-AlN ayingenwa izinsimbi eziningi ezincibilikisiwe, okuhlanganisa i-aluminium, i-lithium, nethusi. Alikwazi ukumelana nosawoti omningi oncibilikisiwe, okuhlanganisa i-chlorides ne-cryolite.

I-Aluminium nitride inomthamo ophezulu wokusebenza oshisayo (170 W/mk, 200 W/mk, kanye no-230 W/mk) kanye nokumelana nevolumu ephezulu namandla e-dielectric.

Ingenwa kalula yi-hydrolysis ngesimo sempushana lapho ichayeke emanzini noma kumswakama. Ukwengeza, ama-acids nama-alkali ahlasela i-aluminium nitride.

Lesi sici siyisivikelo sikagesi. I-Doping ithuthukisa ukuhamba kukagesi kwento. I-AIN ibonisa izakhiwo ze-piezoelectric.

Izinhlelo zokusebenza

I-Microelectronics

Isici esiphawuleka kakhulu se-AlN yi-thermal conductivity yayo ephezulu, eyesibili ngemuva kwe-beryllium phakathi kwezinto zobumba. Emazingeni okushisa angaphansi kuka-200 degrees Celsius, ukuguquguquka kwayo okushisayo kudlula ithusi. Le nhlanganisela ye-conductivity ephezulu, ukumelana nevolumu, namandla e-dielectric kwenza ukusetshenziswa kwayo njengama-substrates kanye nokupakishwa kwama-high-density microelectronic component assemblies. Isidingo sokuqeda ukushisa okukhiqizwa ukulahlekelwa kwe-ohmic nokugcina izingxenye ngaphakathi kwebanga lazo lokushisa lokusebenza kungenye yezinto ezikhawulelayo ezinquma ukuminyana kokupakishwa kwezingxenye ze-elekthronikhi. Ama-substrates e-AlN ahlinzeka ngokupholisa okuphumelelayo kakhulu kunezisekelo ezivamile nezinye ze-ceramic, yingakho esetshenziswa njengezithwali zama-chip namasinki okushisa.

I-Aluminium nitride ithola ukusetshenziswa kwezentengiselwano okwandile kuzihlungi ze-RF zamadivayisi okuxhumana eselula. Ungqimba lwe-aluminium nitride lutholakala phakathi kwezingqimba ezimbili zensimbi. Izicelo ezijwayelekile emkhakheni wezohwebo zifaka phakathi ukwahlukanisa ugesi kanye nezingxenye zokulawula ukushisa kumalaser, ama-chiplets, amakholethi, izivikeli zikagesi, izindandatho zokubopha kumishini yokucubungula i-semiconductor, kanye nokupakishwa kwedivayisi ye-microwave.

Ezinye Izinhlelo zokusebenza

Ngenxa yezindleko ze-AlN, ukusetshenziswa kwayo ngokomlando bekukhawulelwe kuma-aeronautics ezempi nezinkundla zokuhamba. Kodwa-ke, ukwaziswa kufundwe kabanzi futhi kwasetshenziswa emikhakheni eyahlukene. Izakhiwo zayo ezinenzuzo ziyenza ifaneleke eziningi zezicelo ezibalulekile zezimboni.

Izinhlelo zokusebenza zezimboni ze-AlN zifaka izinhlanganisela eziphikisayo zokuphatha izinsimbi ezincibilikisiwe ezinolaka kanye nezinhlelo zokushintshanisa ukushisa ezisebenzayo.

Le nto isetshenziselwa ukwakha izinsimbi zokukhula kwamakristalu e-gallium arsenide futhi iphinde isetshenziswe ekukhiqizeni insimbi nama-semiconductors.

Okunye ukusetshenziswa okuhlongozwayo kwe-aluminium nitride kufaka njengenzwa yamakhemikhali yamagesi anobuthi. Ukusebenzisa ama-nanotube e-AIN ukukhiqiza ama-nanotubes anohlangothi olulodwa ukuze asetshenziswe kulawa madivaysi kube yisihloko socwaningo. Emashumini amabili eminyaka adlule, kuye kwaphenywa ama-diode akhipha ukukhanya asebenza emisebeni ye-ultraviolet. Ukusetshenziswa kwefilimu encane ye-AIN kuzinzwa zamagagasi angaphezulu kuhloliwe.