The current push to protect the environment and save energy has made it easier for people to buy electric cars. High-power package devices are very important for controlling the speed of the vehicle, storing energy, and changing between AC and DC power. Due to the high frequency of thermal cycling, there are strict rules about how heat should be removed from electronic packages. The complexity and variety of the working environment also require packaging materials with better thermal shock resistance and high strength. Also, the fast growth of modern power electronics technology, which is characterized by high voltage, high current, and high frequency, has made it more important that power modules used in this technology are good at getting rid of heat. The ceramic substrate material in an electronic packaging system is the key to getting rid of heat efficiently. It should also be strong and reliable so it can handle the complexity of the work environment. The ceramic substrates that have been mass-produced and widely used in recent years are Al2O3, BeO, SiC, Si3N4, AlN, and so on.

Al2O3 is an important material in the thermal substrate industry because it is easy to make, has good insulation, and can handle high temperatures. Al2O3's low thermal conductivity, on the other hand, means that it can't be used to make high-power or high-voltage devices. Instead, it can only be used in low-heat-dissipation environments. As a heat-dissipation substrate, Al2O3 ceramics are also limited in how they can be used because they are weak when bent.

BeO ceramic substrates meet the requirements for efficient heat dissipation because they have a high thermal conductivity and a low dielectric constant. However, they are not good for large-scale applications because their raw materials are hard to find and they are expensive.

AlN ceramics have a high thermal conductivity and are thought to be a good choice for heat-dispersing substrates. AlN ceramics, on the other hand, are not good at withstanding thermal shock, are prone to deliquescence, and have low strength and toughness. This makes them hard to use in complex environments and makes it hard to make sure their applications are reliable.

SiC ceramics have a high thermal conductivity, but because they have a high dielectric loss and a low breakdown voltage, they can't be used in high-frequency and high-voltage environments.

Silicon nitride is the best ceramic substrate material with high thermal conductivity and reliability at home and abroad. Although the thermal conductivity of the Si3N4 ceramic substrate is slightly lower than that of AlN, its flexural strength and fracture toughness can reach more than twice that of AlN. Meanwhile, the thermal conductivity of Si3N4 ceramic substrate is much higher than that of Al2O3 ceramic substrate; in addition, the thermal expansion coefficient of Si3N4 ceramic substrate is close to that of SiC crystal, the 3rd generation semiconductor substrate, which enables it to match with SiC crystal material more stably. As a result, Si3N4 is the preferred material for high thermal conductivity substrates in third-generation SiC semiconductor power devices.

Silicon Nitride (Si3N4) Ceramic Substrate 0.32mm From WINTRUSTEK