Silicon Carbide (SiC) has properties that are strikingly similar to diamond: it is one of the lightest, hardest, and strongest technical ceramic materials, with excellent thermal conductivity, acid resistance, and low thermal expansion. Silicon Carbide is an excellent material to use when physical wear is a concern, making it suitable for a wide range of applications.

Wintrustek produces Silicon Carbide ceramics using two methods: reaction bonding and sintering.

Reaction bonded SiC (RBSiC or SiSiC) is formed by mixing liquid silicon with penetrating compacts of SiC and carbon. The silicon reacts with the carbon, producing more SiC and binding the original SiC particles together.

Sintered SiC (SSiC) is made from pure SiC powder and non-oxide sintering aids. The material is sintered in an inert atmosphere at temperatures of up to 2000 °C or higher using standard ceramic forming techniques.

Silicon Carbide (SiC) in both forms is highly wear resistant and has excellent mechanical properties.

Typical Properties

Exceptionally high hardness

Abrasion resistant

Corrosion resistant

Low Density

Very high thermal conductivity

Low coefficient of thermal expansion

Chemical and thermal stability

Excellent thermal shock resistance
High Young's modulus

Typical Applications

Blasting nozzle

Heat exchanger

Mechanical seal

Plunger

Semiconductor processing

Kiln furniture

Grinding balls