Izinga eliphezulu lokushisa kwe-ceramic impahla ye-ceramic engu-3YSZ, noma esingakubiza ngokuthi i-tetragonal zirconia polycrystal (TZP), yenziwe nge-zirconium oxide ezinziswe ngo-3% mol yttrium oxide.

Inhlanganisela engeyona eyensimbi eyakhiwe nge-silicon ne-nitrogen, i-silicon nitride (i-Si3N4) futhi iyimpahla ye-ceramic ethuthukisiwe enengxube eguquguqukayo kakhulu yezakhiwo zemishini, ezishisayo, nezikagesi. Ukwengeza, uma kuqhathaniswa nezinye izitsha zobumba, iyi-ceramic esebenza kahle ene-coefficient ephansi yokwandisa okushisayo enikeza ukumelana nokushaqeka okushisayo.

I-Pyrolytic BN noma i-PBN imfushane ye-pyrolytic boron nitride. Iwuhlobo lwe-boron nitride eyi-hexagonal edalwe indlela yokubeka umhwamuko wamakhemikhali (CVD), futhi iyi-boron nitride emsulwa kakhulu engafinyelela ngaphezu kwama-99.99%, emboza cishe ukungabi bikho kwe-porosity.

I-Silicon carbide (i-SiC) iyimpahla ye-ceramic evame ukutshalwa njengekristalu eyodwa yezinhlelo zokusebenza ze-semiconductor. Ngenxa yezakhiwo zayo zemvelo kanye nokukhula kwekristalu eyodwa, ingenye yezinto ezihlala isikhathi eside ze-semiconductor emakethe. Lokhu kuqina kwedlula kude ukusebenza kwawo kagesi.

Izitsha zobumba ze-Boron Nitride (BN) ziphakathi kwezitsha zobumba ezisebenza kahle kakhulu zebanga lobuchwepheshe. Ahlanganisa izici ezihlukile ezimelana nezinga lokushisa, njengama-thermal conductivity aphezulu, namandla aphezulu e-dielectric kanye nokungangeni kwamakhemikhali okukhethekile ukuze kuxazululwe izinkinga kwezinye zezindawo zokufaka izicelo ezidinga kakhulu emhlabeni.

Ama-substrates enziwe nge-ceramic yefilimu emincane abuye abizwe ngokuthi yizinto ze-semiconductor. Yakhiwe ngezingqimba eziningi ezincanyana ezakhiwe kusetshenziswa i-vacuum coating, deposition, noma izindlela zokufafaza. Amashidi engilazi anogqinsi olungaphansi kwemilimitha eyodwa anohlangothi olubili (flat) noma ama-dimensional amathathu athathwa njengama-substrates e-ceramic efilimu encane. Zingakhiqizwa kusuka ku-v

Ngenkathi i-Si3N4 ihlanganisa ukusebenza kahle kwe-thermal nokusebenza komshini. I-thermal conductivity ingacaciswa ku-90 W/mK, futhi ukuqina kwayo kokuphuka kuphezulu kakhulu phakathi kwezitsha zobumba eziqhathanisiwe. Lezi zici ziphakamisa ukuthi i-Si3N4 izokhombisa ukwethembeka okuphezulu kakhulu njenge-metalized substrate.

I-Boron nitride ceramics inamandla amangalisayo nokusebenza okushisayo okuzinze ngokuphawulekayo, okuwenza abe yinketho ekahle yokwenza imibhobho esetshenziswa ekwenzeni i-athomu yensimbi encibilikisiwe.

I-Boron Carbide (B4C) iyi-ceramic eqinile eyakhiwe i-Boron ne-carbon. I-Boron Carbide ingenye yezinto ezilukhuni kunazo zonke ezaziwayo, ikleliswe endaweni yesithathu ngemuva kwe-cubic Boron nitride nedayimane. Kuyimpahla ehambisanayo esetshenziswa ezinhlelweni ezahlukahlukene ezibalulekile, kufaka phakathi izikhali zethangi, amavesti angangenwa izinhlamvu, kanye nezimpushana zokubhubhisa injini. Eqinisweni, iyinto ekhethwayo yezinhlelo zokusebenza ezihlukene zezimboni

I-conductivity ephezulu ye-thermal kanye ne-coefficient ephansi yokwandisa okushisayo. Le nhlanganisela yezakhiwo inikeza ukumelana nokushaqeka okushisayo, okwenza izitsha zobumba zeSilicon Carbide zibe usizo ezinhlobonhlobo zezimboni. Iphinde ibe yi-semiconductor futhi izakhiwo zayo zikagesi ziyenza ifanelekele uhla olubanzi lwezinhlelo zokusebenza. Yaziwa nangobulukhuni bayo obudlulele kanye nokumelana nokugqwala.