Ubushushu obuphezulu berefractory imathiriyeli ye-ceramic 3YSZ, okanye into esinokuyibiza nge-tetragonal zirconia polycrystal (TZP), yenziwe nge-zirconium oxide eye yazinziswa nge-3% mol yttrium oxide.

Ikhompawundi engeyiyo isinyithi eyenziwe nge-silicon kunye ne-nitrogen, i-silicon nitride (i-Si3N4) ikwayinto ephambili ye-ceramic enomxube oguquguqukayo womatshini, i-thermal, kunye neempawu zombane. Ukongeza, xa kuthelekiswa nezinye iikeramics ezininzi, yi-ceramic esebenza kakhulu ene-coefficient ephantsi yokwandiswa kwe-thermal ebonelela ngokumelana nokothuka kwe-thermal.

I-Pyrolytic BN okanye i-PBN imfutshane kwi-pyrolytic boron nitride. Luhlobo lwe-boron nitride enehexagonal eyenziwe yindlela yokubeka umphunga wekhemikhali (CVD), ikwayi-boron nitride esulungekileyo kakhulu enokufikelela ngaphezulu kwe-99.99%, egquma phantse kungabikho porosity.

I-Silicon carbide (i-SiC) yimathiriyeli ye-ceramic ehlala ikhuliswa njengekristale enye yokusetyenziswa kwe-semiconductor. Ngenxa yeempawu zayo zendalo kunye nokukhula kwekristale enye, yenye yezona zinto zizinzileyo ze-semiconductor kwimarike. Oku komelela kudlulela ngaphaya kokusebenza kombane.

Iiseramikhi zeBoron Nitride (BN) ziphakathi kwezona zinto zisebenzayo zomgangatho wobugcisa. Badibanisa iipropathi ezikhethekileyo zokumelana nobushushu, ezifana ne-thermal conductivities ephezulu, kunye namandla aphezulu e-dielectric kunye ne-inertness ekhethekileyo yeekhemikhali ukusombulula iingxaki kwezinye iindawo ezifuna kakhulu izicelo zehlabathi.

Ii-substrates ezenziwe nge-ceramic ye-ceramic encinci zikwabizwa ngokuba yi-semiconductor materials. Yenziwe liqela leeleya ezicekethekileyo eziye zakhiwe kusetyenziswa i-vacuum coating, i-deposition, okanye iindlela zokutshiza. Amaphepha eglasi anobungqingqwa obungaphantsi kwemilimitha enye ene-dimensional (flat) okanye i-dimensional-dimensional ithathwa njengeencinci ze-ceramic substrates ze-ceramic. Zinokuveliswa ukusuka kwi-v

Ngelixa i-Si3N4 idibanisa i-thermal conductivity egqwesileyo kunye nokusebenza koomatshini. I-thermal conductivity ingachazwa kwi-90 W/mK, kwaye ukuqina kwayo kokwaphuka kowona mgangatho uphezulu phakathi kweeseramikhi ezithelekisayo. Ezi mpawu zibonisa ukuba i-Si3N4 iya kubonisa ukuthembeka okuphezulu njenge-metalized substrate.

I-Boron nitride ceramics inamandla amangalisayo kunye nokusebenza kwe-thermal ezinzile ngokuphawulekayo, okwenza kube yinto efanelekileyo yokwenza imilomo esetyenziswa kwi-atomization yesinyithi esityhidiweyo.

I-Boron Carbide (B4C) yi-ceramic ehlala ihleli eyenziwe yiBoron kunye nekhabhoni. IBoron Carbide yenye yezona zinto zinzima zaziwayo, ikwindawo yesithathu emva kwe-cubic Boron nitride kunye nedayimane. Yimathiriyeli eyondeleleneyo esetyenziswa kwiintlobo ngeentlobo zezicelo ezibalulekileyo, kubandakanya isikrweqe setanki, iivesti zembumbulu, kunye nomgubo wokutshabalalisa i-injini. Ngapha koko, yeyona nto ikhethwayo kwiintlobo ngeentlobo zezicelo zamashishini

I-conductivity ephezulu ye-thermal kunye ne-coefficient ephantsi yokwandiswa kwe-thermal. Le ndibaniselwano yeepropathi ibonelela ngokuxhathisa ukothuka kwe-thermal, okwenza iiseramics zeSilicon Carbide zibe luncedo kuluhlu olubanzi lwamashishini. Kwakhona i-semiconductor kunye neempawu zayo zombane zenza ukuba zilungele uluhlu olubanzi lwezicelo. Ikwayaziwa ngokuba lukhuni kwayo ngokugqithisileyo kunye nokumelana nomhlwa.