Motsoako o seng oa tšepe o entsoeng ka silicon le naetrojene, silicon nitride (Si3N4) hape ke thepa e tsoetseng pele ea ceramic e nang le motsoako o feto-fetohang oa thepa ea mochini, mocheso le motlakase. Ntle le moo, ha e bapisoa le lirafshoa tse ling tse ngata, ke ceramic e sebetsang hantle e nang le coefficient e tlase ea katoloso ea mocheso e fanang ka khanyetso e ntle ea mocheso.

Pyrolytic BN kapa PBN e khutšoanyane bakeng sa pyrolytic boron nitride. Ke mofuta oa hexagonal boron nitride e entsoeng ke mokhoa oa ho beha mouoane oa lik'hemik'hale (CVD), hape ke boron nitride e hloekileng haholo e ka fihlang ho feta 99.99%, e koahelang hoo e batlang e se na porosity.

Silicon carbide (SiC) ke thepa ea ceramic e atisang ho lengoa e le kristale e le 'ngoe bakeng sa lisebelisoa tsa semiconductor. Ka lebaka la thepa ea eona ea tlhaho le kholo ea kristale e le 'ngoe, ke e' ngoe ea lisebelisoa tsa semiconductor tse tšoarellang ka ho fetesisa 'marakeng. Ho tšoarella hona ho fetela hole ho ts'ebetso ea eona ea motlakase.

Li-ceramics tsa Boron Nitride (BN) ke tse ling tsa lirafshoa tse sebetsang ka ho fetisisa tsa boemo ba tekheniki. Li kopanya thepa e ikhethang e hanyetsanang le mocheso, joalo ka li-conductivity tse phahameng tsa mocheso, tse nang le matla a phahameng a dielectric le ho se sebetse hantle ha lik'hemik'hale ho rarolla mathata libakeng tse ling tsa lefats'e tse hlokang ho sebelisoa haholo.

Li-substrates tse entsoeng ka ceramic-filimi e nyane li boetse li bitsoa lisebelisoa tsa semiconductor. E entsoe ka likarolo tse 'maloa tse tšesaane tse hahiloeng ho sebelisoa vacuum coating, deposition, kapa sputtering. Lipampiri tsa khalase tse nang le botenya bo ka tlase ho millimeter e le 'ngoe e nang le mahlakore a mabeli (sephara) kapa li-dimensional tse tharo li nkoa e le li-substrates tsa ceramic tsa filimi e tšesaane. Li ka etsoa ho tloha ho v

Ha Si3N4 e kopanya ts'ebetso e ntle ea mocheso le ts'ebetso ea mochini. Thermal conductivity e ka hlalosoa ho 90 W/mK, 'me ho thatafala ha eona ke ho phahameng ka ho fetisisa har'a lirafshoa tse bapisoang. Litšobotsi tsena li fana ka maikutlo a hore Si3N4 e tla bonts'a ts'epahalo e phahameng ka ho fetesisa joalo ka karolo e entsoeng ka tšepe.

Li-ceramics tsa Boron nitride li na le matla a tsotehang le ts'ebetso ea mocheso e tsitsitseng ka mokhoa o tsotehang, e leng se etsang hore e be khetho e nepahetseng bakeng sa ho etsa li-nozzles tse sebelisoang ho atomization ea tšepe e qhibilihisitsoeng.

Boron Carbide (B4C) ke ceramic e tšoarellang nako e telele e entsoeng ka Boron le carbon. Boron Carbide ke e 'ngoe ea lintho tse thata ka ho fetisisa tse tsejoang, e boemong ba boraro ka morao ho cubic Boron nitride le taemane. Ke thepa e kopanetsoeng e sebelisoang lits'ebetsong tse fapaneng tsa bohlokoa, ho kenyeletsoa lihlomo tsa tanka, li-bulletproof vests le phofshoana ea ho senya enjene. Ha e le hantle, ke thepa e ratoang bakeng sa mefuta e fapaneng ea lisebelisoa tsa indasteri

Mocheso o phahameng oa mocheso le coefficient e tlase ea katoloso ea mocheso. Motsoako ona oa thepa o fana ka khanyetso e ikhethang ea mocheso, e etsa hore lirafshoa tsa Silicon Carbide li sebetse liindastering tse fapaneng. Hape ke semiconductor mme thepa ea eona ea motlakase e etsa hore e tšoanelehe bakeng sa mefuta e mengata ea likopo. E boetse e tsebahala ka boima ba eona bo feteletseng le ho hanyetsa ho bola.

Aluminium nitride e na le conductivity e phahameng ea mocheso (170 W/mk, 200 W/mk, le 230 W/mk) hammoho le ho hanyetsa molumo o phahameng le matla a dielectric.