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  • High Thermal Conductivity AlN Ceramic Substrate
  • High Thermal Conductivity AlN Ceramic Substrate
  • High Thermal Conductivity AlN Ceramic Substrate
  • High Thermal Conductivity AlN Ceramic Substrate

High Thermal Conductivity AlN Ceramic Substrate

High Thermal Conductivity AlN Ceramic Substrate
  • Denisity: 3.31 g/cm3
  • Compressive Strength: 2100 MPa
  • Hardness (Vickers): 11 GPa
  • PRODUCT DETAIL

 Product Description 

 

Aluminum Nitride, formula AlN, is a newer material in the technical ceramics family. While its discovery occurred over 100 years ago, it has been developed into a commercially viable product with controlled and reproducible properties within the last 20 years.


Aluminum nitride has a hexagonal crystal structure and is a covalent bonded material. The use of sintering aids and hot pressing is required to produce a dense technical grade material. The material is stable to very high temperatures in inert atmospheres. In air, surface oxidation begins above 700°C. A layer of aluminum oxide forms which protects the material up to 1370°C. Above this temperature bulk oxidation occurs. Aluminum nitride is stable in hydrogen and carbon dioxide atmospheres up to 980°C. 


The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalis through attack on the aluminum nitride grains. The material hydrolyzes slowly in water. Most current applications are in the electronics area where heat removal is important. This material is of interest as a non-toxic alternative to beryllia. Metallization methods are available to allow AlN to be used in place of alumina and BeO for many electronic applications

 

 Physical Properties 

 

  Good dielectric properties

  High thermal conductivity

  Low thermal expansion coefficient, close to that of Silicon

  Non-reactive with normal semiconductor process chemicals and gases

 

 Applications 

 

 Heat sinks & heat spreaders

 Electrical insulators for lasers

 Chucks, clamp rings for semiconductor processing equipment

 Electrical insulators

 Silicon wafer handling and processing

 Substrates & insulators for microelectronic devices & opto electronic devices

 Substrates for electronic packages

 Chip carriers for sensors and detectors

 Chiplets

 Collets

 Laser heat management components

 Molten metal fixtures

 Packages for microwave devices

 Material Properties 


Mechanical

Units of Measure

SI/Metric

(Imperial)

Density

gm/cc (lb/ft3)

3.26

-203.5

Porosity

% (%)

0

0

Color

gray

Flexural Strength

MPa (lb/in2x103)

320

-46.4

Elastic Modulus

GPa (lb/in2x106)

330

-47.8

Shear Modulus

GPa (lb/in2x106)

Bulk Modulus

GPa (lb/in2x106)

Poisson’s Ratio

0.24

-0.24

Compressive Strength

MPa (lb/in2x103)

2100

-304.5

Hardness

Kg/mm2

1100

Fracture Toughness KIC

MPa•m1/2

2.6

Maximum Use Temperature

°C (°F)

(no load)

Thermal




Thermal Conductivity

W/m•°K (BTU•in/ft2•hr•°F)

140–180

(970–1250)

Coefficient of Thermal Expansion

10–6/°C (10–6/°F)

4.5

-2.5

Specific Heat

J/Kg•°K (Btu/lb•°F)

740

-0.18

Electrical




Dielectric Strength

ac-kv/mm (volts/mil)

17

-425

Dielectric Constant

@ 1 MHz

9

-9

Dissipation Factor

@ 1 MHz

0.0003

-0.0003

Loss Tangent

@ 1 MHz

Volume Resistivity

ohm•cm

>1014



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 Packaging & Shipping

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Xiamen Wintrustek Advanced Materials Co., Ltd.

ADDRESS:No.987 Huli Hi-Tech Park, Xiamen, China 361009
Phone:0086 13656035645
Tel:0086-592-5716890


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