Ngokupakishwa kwe-elekthronikhi, ama-substrates e-ceramic adlala indima ebalulekile ekuxhumaniseni amashaneli okushisa angaphakathi nangaphandle, kanye nokuxhuma kokubili kukagesi nokusekelwa kwemishini. Ama-substrates e-Ceramic anezinzuzo zokuguquguquka okuphezulu kokushisa, ukumelana nokushisa okuhle, amandla aphezulu emishini, kanye ne-coefficient ephansi yokwanda okushisayo, futhi ayizinto ezivamile ze-substrate yokupakisha idivayisi ye-semiconductor yamandla.

Ngokuya ngesakhiwo kanye nenqubo yokukhiqiza, ama-substrates e-ceramic ahlukaniswa ngezinhlobo ezi-5.

1. I-High-Temperature Co-fired Multilayer Ceramic Substrates (HTCC)

2. I-Low-Temperature Co-fired Ceramic Substrates (LTCC)

3. I-Thick Film Ceramic Substrates (TFC)

4. I-Direct Bonded Copper Ceramic Substrates (DBC)

5. I-Direct Plated Copper Ceramic Substrates (DPC)

   
   

Izinqubo Ezihlukene Zokukhiqiza

I-Direct Bonded Copper (DBC) i-ceramic substrate ikhiqizwa ngokwengeza umoya-mpilo phakathi kwethusi ne-ceramic ukuze kutholwe isixazululo se-Cu-O eutectic phakathi kuka-1065~1083℃, okulandelwa ukusabela ukuze kutholwe isigaba esimaphakathi (CuAlO2 noma i-CuAl2O4), ngaleyo ndlela kuqhamuke inhlanganisela yekhemikhali yensimbi. ye-Cu plate kanye ne-ceramic substrate, bese ekugcineni ibona ukulungiswa kwesithombe ngobuchwepheshe be-lithography ukwakha isifunda.

I-coefficient yokwandisa okushisayo ye-substrate ye-DBC isondelene kakhulu naleyo yezinto ze-LED epitaxial, ezinganciphisa kakhulu ukucindezeleka okushisayo okukhiqizwa phakathi kwe-chip ne-substrate.

I-Direct Plated Copper (DPC) i-ceramic substrate yenziwe ngokufafaza ungqimba lwethusi ku-ceramic substrate, bese iveza, igxilile, isuswe ifilimu, futhi ekugcineni ikhulise ukushuba komugqa wethusi nge-electroplating noma nge-chemical plating, ngemva kokukhipha i-photoresist, umugqa wensimbi usuqediwe.

Izinzuzo Ezihlukene Nemibi

Izinzuzo ze-DBC Ceramic Substrate

Njengoba i-foil yethusi inokuhamba okuhle kukagesi nokushisayo, i-DBC inezinzuzo zokuqhuba kahle kwe-thermal, ukwahlukanisa okuhle, ukwethembeka okuphezulu, futhi isetshenziswe kabanzi kumaphakheji e-IGBT, LD, kanye ne-CPV. Ikakhulukazi ngenxa ye-foil yethusi eqinile (100 ~ 600μm), inezinzuzo ezisobala emkhakheni we-IGBT no-LD wokupakisha.

Ububi be-DBC Ceramic Substrate

Inqubo yokukhiqiza isebenzisa ukusabela kwe-eutectic phakathi kwe-Cu ne-Al2O3 emazingeni okushisa aphezulu, okudinga izinga eliphezulu lemishini yokukhiqiza kanye nokulawulwa kwenqubo, ngaleyo ndlela kwenze izindleko zibe phezulu.

Ngenxa yokwenziwa kalula kwe-microporosity phakathi kwesendlalelo se-Al2O3 ne-Cu, esinciphisa ukumelana nokushaqeka okushisayo komkhiqizo, lezi zimbi ziba umgoqo wokuphromotha kwe-DBC substrate.

Izinzuzo ze-DPC Ceramic Substrate

Inqubo yokushisa ephansi (ngaphansi kuka-300 ° C) isetshenziswa, egwema ngokuphelele imiphumela emibi yokushisa okuphezulu ezintweni noma isakhiwo somugqa, futhi iphinde inciphise izindleko zenqubo yokukhiqiza.

Ukusetshenziswa kwefilimu elincanyana kanye nobuchwepheshe be-photolithography, ukuze i-substrate kumugqa wensimbi ocolisekileyo, ngakho-ke i-substrate ye-DPC ilungele ukuqondanisa kwezidingo zokunemba okuphezulu zokupakishwa kwezinto zikagesi.

Ukungalungi kwe-DPC Ceramic Substrate

Ugqinsi olulinganiselwe lwengqimba yethusi efakwe ngama-electroplated kanye nokungcoliswa okuphezulu kwesixazululo semfucuza ye-electroplating.

Amandla okubopha phakathi kwesendlalelo sensimbi ne-ceramic aphansi, futhi ukwethembeka komkhiqizo kuphansi uma kusetshenziswa.