I-Silicon Carbide, eyaziwa ngokuba yi-carborundum, yikhompawundi ye-silicon-carbon. Le khompawundi yemichiza iyinxalenye ye-mineral moissanite. Uhlobo lwendalo lweSilicon Carbide luthiywe ngoGqr Ferdinand Henri Moissan, usokhemesti waseFransi. I-Moissanite idla ngokufumaneka kwixabiso lemizuzu kwi-meteorites, kimberlite, kunye ne-corundum. Yile ndlela uninzi lwezorhwebo lweSilicon Carbide lwenziwa ngayo. Nangona ngokwemvelo iSilicon Carbide kunzima ukuyifumana eMhlabeni, ininzi esithubeni.

Ukwahluka kweSilicon Carbide

Iimveliso zeSilicon Carbide zenziwe ngeendlela ezine zokusetyenziswa kwizicelo zobunjineli borhwebo. Ezi ziquka

I-Sintered Silicon Carbide (SSiC)

I-Reaction Bonded Silicon Carbide (RBSiC okanye iSiSiC)

I-Nitride ebotshelelwe kwiSilicon Carbide (NSiC)

IRecrystallized Silicon Carbide (RSiC)

Ezinye iinguqu zebhondi ziquka i-SIALON eboshwe iSilicon Carbide. Kukwakho ne-CVD Silicon Carbide (CVD-SiC), eluhlobo olusulungekileyo ngokugqithisileyo lwekhompawundi eveliswa yikhemikhali yokubeka umphunga.

Ukuze wenze i-sinter Silicon Carbide, kuyafuneka ukuba ungeze izixhobo zokuncedisa ezinceda ukwenza inqanaba lolwelo kwiqondo lobushushu le-sintering, ukuvumela iinkozo zeSilicon Carbide ukuba zihlangane.

Iimpawu eziphambili zeSilicon Carbide

I-conductivity ephezulu ye-thermal kunye ne-coefficient ephantsi yokwandiswa kwe-thermal. Le ndibaniselwano yeepropathi ibonelela ngokuxhathisa ukothuka kwe-thermal, okwenza iiseramics zeSilicon Carbide zibe luncedo kuluhlu olubanzi lwamashishini. Kwakhona i-semiconductor kunye neempawu zayo zombane zenza ukuba zilungele uluhlu olubanzi lwezicelo. Ikwaziwa nangobulukhuni bayo obugqithisileyo kunye nokumelana nomhlwa.

Ukusetyenziswa kweSilicon Carbide

I-Silicon Carbide ingasetyenziswa kuluhlu olubanzi lwamashishini.

Ukuqina kwayo ngokwasemzimbeni kuyenza ifaneleke kwiinkqubo zokutshiza ezirhabaxa ezifana nokusila, ukuhona, ukuqhushumba kwesanti, kunye nokusika ijethi yamanzi.

Amandla eSilicon Carbide okumelana namaqondo obushushu aphezulu kakhulu ngaphandle kokuqhekeka okanye ukonakala kusetyenziswa ukwenza iidiski zeeramic brake zeemoto zemidlalo. Ikwasetyenziswa njengesixhobo sesikrweqe kwiivesti zembumbulu kwaye njengesixhobo sokutywina sokutywinwa kwe-shaft shaft, apho ihlala ibaleka ngesantya esiphezulu xa idibana neSilicon Carbide seal. I-Silicon Carbide ephezulu ye-thermal conductivity, ekwazi ukutshabalalisa ubushushu obukhukhulayo obuveliswa yi-interface ye-rubbing, luncedo olukhulu kwezi zicelo.

Ngenxa yobunzima obuphezulu bezinto eziphathekayo, isetyenziswa kwizicelo ezininzi zobunjineli apho amanqanaba aphezulu okumelana nokutyibilika, ukuguguleka kunye nokunxitywa kwe-corrosive. Ngokuqhelekileyo, oku kusebenza kumacandelo asetyenziswa kwiimpompo okanye iivalvu kwizicelo ze-oilfield, apho iinxalenye zentsimbi eziqhelekileyo zinokubonisa ukunxiba okugqithisileyo okukhokelela kukusilela okukhawulezayo.

Iipropathi zombane ezikhethekileyo zekhompawundi njengesemiconductor ziyenza ilungele ukwenziwa kwe-ultrafast and high-voltage high-voltage light-emitting diode, MOSFETs, kunye ne thyristors for high-power switching.

I-coefficient ephantsi yokwandiswa kwe-thermal, ukuqina, ukuqina, kunye ne-thermal conductivity yenza ukuba ilungele izibuko zeteleskopu yeenkwenkwezi. I-Thin filament pyrometry bubuchule bokubona obusebenzisa imicu yeSilicon Carbide ukulinganisa ubushushu beegesi.

Ikwasetyenziswa kwizinto zokufudumeza ekufuneka zimelane namaqondo obushushu aphezulu kakhulu. Ikwasetyenziselwa ukubonelela ngenkxaso yesakhiwo kwiireactor zenyukliya zobushushu obuphezulu begesi.