I-Aluminium Nitride (i-AlN) yaqala ukwenziwa ngo-1877, kodwa ukusetyenziswa kwayo okunokubakho kwi-microelectronics ayizange ikhuthaze uphuhliso oluphezulu, izinto eziphathekayo ezithengiswayo kude kube phakathi kwiminyaka yee-1980.

I-AIN yifom ye-aluminiyam ye-nitrate. I-aluminiyam i-nitride ihluke kwi-aluminiyam nitrate kuba i-nitrogen compound kunye ne-oxidation state ethile ye--3, ngelixa i-nitrate ibhekisela kuyo nayiphi na i-ester okanye ityuwa ye-nitric acid. Ulwakhiwo lwekristale yesi sixhobo lunehexagonal wurtzite.

Udibaniso lwe-AIN

I-AlN iveliswa ngokucuthwa kwe-carbothermal ye-alumina okanye i-nitridation ngqo ye-aluminiyam. Inobunzima be-3.33 g/cm3 kwaye, nangona inganyibiliki, iyahlukana kumaqondo obushushu angaphezu kwama-2500 °C kunye noxinzelelo lwe-atmospheric. Ngaphandle koncedo lwezongezo ezenza ulwelo, izinto eziphathekayo zibotshelelwe ngokudibeneyo kwaye zixhathisa kwi-sintering. Ngokuqhelekileyo, iioksidi ezifana neY2O3 okanye iCaO zivumela ukuntywila kumaqondo obushushu aphakathi kwe-1600 kunye ne-1900 ngokukaCelsius.

Amalungu enziwe nge-aluminiyam nitride inokuveliswa ngeendlela ezahlukeneyo, kubandakanywa ukucinezela kwe-isostatic ebandayo, ukubumba inaliti ye-ceramic, ukubunjwa kwenaliti yoxinzelelo oluphantsi, ukuphosa iteyiphu, ukuchaneka kwe-machining, kunye nokucinezela okomileyo.

Ezona mpawu

I-AlN ayinakuchaphazeleka kwiintsimbi ezininzi ezityhidiweyo, kubandakanya i-aluminiyam, i-lithium, kunye nobhedu. Ayinakulawulwa kuninzi lweetyuwa ezityhidiweyo, kuquka ikloridi kunye ne-cryolite.

I-Aluminiyam i-nitride ine-conductivity ephezulu ye-thermal (170 W/mk, 200 W/mk, kunye ne-230 W/mk) kunye nomthamo ophezulu wokuxhathisa amandla kunye namandla e-dielectric.

Ichaphazeleka kwi-hydrolysis kwifom yomgubo xa ibonakaliswe emanzini okanye kumswakama. Ukongeza, iiasidi kunye nealkali zihlasela i-aluminium nitride.

Esi sixhobo sisigqubuthelo sombane. I-Doping iphucula ukuhanjiswa kombane kwisixhobo. I-AIN ibonisa iimpawu ze-piezoelectric.

Usetyenziso

IMicroelectronics

Eyona nto iphawulekayo ye-AlN yi-conductivity ephezulu ye-thermal, eyesibini kuphela kwi-beryllium phakathi kwezinto ze-ceramic. Kumaqondo obushushu angaphantsi kwama-200 degrees celcius, i-thermal conductivity yayo yodlula ubhedu. Le ndibaniselwano ye-conductivity ephezulu, ukuxhathisa umthamo, kunye namandla e-dielectric kwenza ukusetyenziswa kwayo njengama-substrates kunye nokupakishwa kwamandla aphezulu okanye ubuninzi bee-microelectronic component assemblies. Isidingo sokutshatyalaliswa kobushushu obuveliswa yilahleko ye-ohmic kunye nokugcina amacandelo ngaphakathi koluhlu lwazo lweqondo lokushisa ngenye yezinto ezithintelayo ezimisela ubuninzi bokupakishwa kwamacandelo e-elektroniki. I-AlN substrates ibonelela ngokupholisa okusebenzayo ngakumbi kunesiqhelo kunye nezinye ii-ceramic substrates, yiyo loo nto zisetyenziswa njengabathwali be-chip kunye neesinki zobushushu.

I-Aluminiyam nitride ifumana usetyenziso lwentengiso oluxhaphakileyo kwizihluzi zeRF zezixhobo zonxibelelwano oluphathwayo. Umaleko we-aluminiyam nitride uphakathi kweeleya ezimbini zentsimbi. Usetyenziso oluqhelekileyo kwicandelo lezorhwebo lubandakanya ukugqunywa kombane kunye namacandelo olawulo lobushushu kwiilaser, ii-chiplets, iikholethi, izithinteli zombane, amakhonkco okubamba kwisixhobo sokusetyenzwa kwe-semiconductor, kunye nokupakishwa kwesixhobo se-microwave.

Ezinye ii-Application

Ngenxa yeendleko ze-AlN, izicelo zayo ngokwembali bezikhawulelwe kwi-aeronautics yomkhosi kunye nemimandla yezothutho. Nangona kunjalo, imathiriyeli ifundwe ngokubanzi kwaye isetyenziswe kwiinkalo ezahlukeneyo. Iimpawu zayo ezinenzuzo zenza ukuba zilungele inani lezicelo ezibalulekileyo zoshishino.

Usetyenziso lwemizi-mveliso ye-AlN luquka i-refractory composites yokuphatha isinyithi esityhidiweyo esinamandla kunye neenkqubo ezisebenzayo zokutshintshiselana kobushushu.

Esi sixhobo sisetyenziselwa ukwakhiwa kwee-crucibles ekukhuleni kwe-gallium arsenide crystals kwaye isetyenziselwa ukuveliswa kwentsimbi kunye ne-semiconductors.

Olunye usetyenziso olucetywayo lwe-aluminiyam nitride lubandakanya njengenzwa yekhemikhali yeegesi ezinetyhefu. Ukusebenzisa i-AIN nanotubes ukuvelisa i-nanotubes ye-quasi-one-dimensional ukuze isetyenziswe kwezi zixhobo ibe yinto yophando. Kwiminyaka engamashumi amabini edlulileyo, ii-diode ezikhupha ukukhanya ezisebenza kwi-ultraviolet spectrum nazo ziye zaphandwa. Ukusetyenziswa kwefilimu encinci ye-AIN kwi-surface acoustic wave sensors iye yavavanywa.