I-Silicon carbide (i-SiC) yimathiriyeli ye-ceramic ehlala ikhuliswa njengekristale enye yokusetyenziswa kwe-semiconductor. Ngenxa yeempawu zayo zendalo kunye nokukhula kwekristale enye, yenye yezona zinto zizinzileyo ze-semiconductor kwimarike. Oku komelela kudlulela ngaphaya kokusebenza kombane.

Iiseramikhi zeBoron Nitride (BN) ziphakathi kwezona zinto zisebenzayo zomgangatho wobugcisa. Badibanisa iipropathi ezikhethekileyo zokumelana nobushushu, ezifana ne-thermal conductivities ephezulu, kunye namandla aphezulu e-dielectric kunye ne-inertness ekhethekileyo yeekhemikhali ukusombulula iingxaki kwezinye iindawo ezifuna kakhulu izicelo zehlabathi.

Ii-substrates ezenziwe nge-ceramic ye-ceramic encinci zikwabizwa ngokuba yi-semiconductor materials. Yenziwe liqela leeleya ezicekethekileyo eziye zakhiwe kusetyenziswa i-vacuum coating, i-deposition, okanye iindlela zokutshiza. Amaphepha eglasi anobungqingqwa obungaphantsi kwemilimitha enye ene-dimensional (flat) okanye i-dimensional-dimensional ithathwa njengeencinci ze-ceramic substrates ze-ceramic. Zinokuveliswa ukusuka kwi-v

Ngelixa i-Si3N4 idibanisa i-thermal conductivity egqwesileyo kunye nokusebenza koomatshini. I-thermal conductivity ingachazwa kwi-90 W/mK, kwaye ukuqina kwayo kokwaphuka kowona mgangatho uphezulu phakathi kweeseramikhi ezithelekisayo. Ezi mpawu zibonisa ukuba i-Si3N4 iya kubonisa ukuthembeka okuphezulu njenge-metalized substrate.

I-Boron nitride ceramics inamandla amangalisayo kunye nokusebenza kwe-thermal ezinzile ngokuphawulekayo, okwenza kube yinto efanelekileyo yokwenza imilomo esetyenziswa kwi-atomization yesinyithi esityhidiweyo.

I-Boron Carbide (B4C) yi-ceramic ehlala ihleli eyenziwe yiBoron kunye nekhabhoni. IBoron Carbide yenye yezona zinto zinzima zaziwayo, ikwindawo yesithathu emva kwe-cubic Boron nitride kunye nedayimane. Yimathiriyeli eyondeleleneyo esetyenziswa kwiintlobo ngeentlobo zezicelo ezibalulekileyo, kubandakanya isikrweqe setanki, iivesti zembumbulu, kunye nomgubo wokutshabalalisa i-injini. Ngapha koko, yeyona nto ikhethwayo kwiintlobo ngeentlobo zezicelo zamashishini

I-conductivity ephezulu ye-thermal kunye ne-coefficient ephantsi yokwandiswa kwe-thermal. Le ndibaniselwano yeepropathi ibonelela ngokuxhathisa ukothuka kwe-thermal, okwenza iiseramics zeSilicon Carbide zibe luncedo kuluhlu olubanzi lwamashishini. Kwakhona i-semiconductor kunye neempawu zayo zombane zenza ukuba zilungele uluhlu olubanzi lwezicelo. Ikwayaziwa ngokuba lukhuni kwayo ngokugqithisileyo kunye nokumelana nomhlwa.

I-Aluminiyam i-nitride ine-conductivity ephezulu ye-thermal (170 W/mk, 200 W/mk, kunye ne-230 W/mk) kunye nomthamo ophezulu wokuxhathisa amandla kunye namandla e-dielectric.

Umothuko wobushushu ngoyena nobangela uphambili wokusilela kwizicelo zobushushu obuphezulu. Yenziwe ngamacandelo amathathu: ukwanda kwe-thermal, conductivity ye-thermal, kunye namandla. Ukutshintsha kwamaqondo obushushu okukhawulezayo, ukuhla nokunyuka, kubangela ukuhluka kobushushu ngaphakathi kwendawo, kufana nokuqhekeka okubangelwa kukuhlikihla igaqa lomkhenkce kwiglasi eshushu. Ngenxa yokwandiswa okungafaniyo kunye nokuncipha, ukunyakaza

Ishishini leemoto ligcina izinto ezintsha ngokusebenzisa iiseramics zobugcisa obuphambili ukuvelisa utshintsho oluphucula ukusebenza kuzo zombini iinkqubo zalo zokuvelisa kunye namacandelo athile ezithuthi zesizukulwana esitsha.