Okwamanje, umsindo okhulayo wokuvikelwa kwemvelo nokongiwa kwamandla kwenze izimoto ezisebenza ngogesi zasekhaya zagqama kakhulu. Amadivayisi wephakeji yamandla aphezulu adlala indima ebalulekile ekulawuleni isivinini semoto kanye nokugcina ukuguqula i-AC ne-DC. I-high-frequency thermal cycling ibeke izimfuneko eziqinile zokulahla ukushisa kwamaphakheji kagesi, kuyilapho ubunkimbinkimbi nokwehlukahlukana kwendawo yokusebenza kudinga izinto zokupakisha ukuze zibe nokuma okuhle kokushisayo namandla aphezulu ukuze zidlale indima esekelayo. Ukwengeza, ngokuthuthukiswa okusheshayo kobuchwepheshe besimanje be-electronics amandla, okubonakala nge-voltage ephezulu, yamanje ephezulu, kanye nemvamisa ephezulu, ukusebenza kahle kokukhipha ukushisa kwamamojula wamandla asetshenziswa kulobu buchwepheshe sekubaluleke kakhulu. Izinto ze-ceramic substrate kumasistimu wokupakisha we-elekthronikhi ziwukhiye wokukhipha ukushisa okusebenzayo, futhi zinamandla aphezulu nokuthembeka ekuphenduleni inkimbinkimbi yendawo yokusebenza. Ama-substrates e-ceramic ayinhloko akhiqizwe ngobuningi futhi asetshenziswa kabanzi eminyakeni yamuva i-Al2O3, BeO, SiC, Si3N4, AlN, njll.

I-Al2O3 Ceramic idlala indima ebalulekile embonini ye-substrate elahla ukushisa ngokusekelwe enqubweni yayo yokulungisa elula, ukwahlukanisa okuhle nokumelana nezinga lokushisa eliphezulu. Kodwa-ke, i-thermal conductivity ephansi ye-Al2O3 ayikwazi ukuhlangabezana nezimfuneko zokuthuthukiswa kwamandla aphezulu kanye nedivayisi ye-voltage ephezulu, futhi isebenza kuphela endaweni yokusebenza enezidingo eziphansi zokulahla ukushisa. Ngaphezu kwalokho, amandla okugoba aphansi aphinde akhawulele ububanzi bokusetshenziswa kwezitsha zobumba ze-Al2O3 njengama-substrates achitha ukushisa.

Ama-substrates e-BeO ceramic ane-conductivity ephezulu ye-thermal kanye ne-dielectric engaguquki ukuze ahlangabezane nezidingo zokukhipha ukushisa okuphumelelayo. Kodwa ayihambisani nokusetshenziswa okukhulu ngenxa yobuthi bayo, obuthinta impilo yabasebenzi.

I-AlN Ceramic ibhekwa njengekhandidethi elibalulekile le-substrate yokukhipha ukushisa ngenxa yokuguquguquka kwayo okuphezulu kwe-thermal. Kodwa i-AlN Ceramic inokumelana nokushaqeka okushisayo okungekuhle, ukudleka kalula, amandla aphansi nokuqina, okungakulungele ukusebenza endaweni eyinkimbinkimbi, futhi kunzima ukuqinisekisa ukwethembeka kwezinhlelo zokusebenza.

I-SiC ceramic inokusebenza okuphezulu kwe-thermal, ngenxa yokulahleka kwayo okuphezulu kwe-dielectric kanye ne-voltage yokuphuka ephansi, ayizilungele izinhlelo zokusebenza ezisendaweni yokusebenza yefrikhwensi ephezulu kanye ne-voltage.

I-Si3N4 ibonwa njengento engcono kakhulu ye-ceramic substrate ene-thermal conductivity ephezulu nokuthembeka okuphezulu ekhaya naphesheya. Nakuba i-thermal conductivity ye-Si3N4 ceramic substrate iphansi kancane kunaleyo ye-AlN, amandla ayo aguquguqukayo kanye nokuqina kokuphuka kungafinyelela ngaphezu kokuphindwe kabili kwe-AlN. Ngaleso sikhathi, i-thermal conductivity ye-Si3N4 ceramic iphakeme kakhulu kunaleyo ye-Al2O3 ceramic. Ngaphezu kwalokho, i-coefficient yokunwetshwa okushisayo kwe-Si3N4 ceramic substrates iseduze naleyo yamakristalu e-SiC, i-3rd generation semiconductor substrate, eyivumela ukuthi ifane ngokuzinza ne-SiC crystal material. Kwenza i-Si3N4 ibe into ekhethwayo yama-substrates aphezulu e-thermal conductivity yesizukulwane sesi-3 samadivayisi kagesi we-SiC semiconductor.