Ingcaciso yeMveliso
I-Aluminium Nitride, ifomula ye-AlN, yinto entsha kusapho lweekeramics zobugcisa. Ngelixa ukufunyanwa kwayo kwenzeka kwiminyaka eyi-100 eyadlulayo, iye yaphuhliswa yaba yimveliso enokuthengiseka eneempawu ezilawulwayo nezinokuveliswa kwakhona kwiminyaka engama-20 edlulileyo.
I-Aluminiyam nitride inesakhiwo sekristale esinehexagonal kwaye sisixhobo esibambeneyo. Ukusetyenziswa kwezixhobo zokucoca kunye nokucinezela okushushu kuyafuneka ukuvelisa izinto ezishinyeneyo zebakala lobugcisa. Izinto eziphathekayo zizinzileyo kumaqondo okushisa aphezulu kakhulu kwi-inert atmospheres. Emoyeni, i-oxidation yomphezulu iqala ngaphezu kwama-700°C. Umaleko we-aluminiyam oksayidi yeefom ezikhusela imathiriyeli ukuya kuthi ga kwi-1370°C. Ngaphezulu kobu bushushu bubuninzi be oxidation yenzeka. I-aluminiyam nitride izinzile kwi-hydrogen kunye ne-carbon dioxide atmosphere ukuya kuma-980°C.
Izinto eziphathekayo zinyibilika ngokucothayo kwii-asidi zeminerali ngokuhlaselwa komda wokuziinkozo, nakwi-alkalis eyomeleleyo ngokuhlaselwa kweenkozo ze-aluminiyam nitride. Isixhobo se-hydrolyzes kancinci emanzini. Uninzi lwezicelo zangoku zikwindawo yombane apho ukususwa kobushushu kubalulekile. Esi sixhobo sinomdla njengenye indlela engeyiyo ityhefu kwi-beryllia. Iindlela ze-Metallization ziyafumaneka ukuvumela ukuba i-AlN isetyenziswe endaweni ye-alumina kunye ne-BeO kwizicelo ezininzi ze-elektroniki
Iipropati Zomzimba
✔ Iimpawu ezilungileyo ze-dielectric
✔ I-conductivity ephezulu ye-thermal
✔ I-coefficient yokwandisa i-thermal ephantsi, kufutshane ne-Silicon
✔ I-non-reactive kunye neekhemikhali eziqhelekileyo zenkqubo ye-semiconductor kunye neegesi
Usetyenziso
✔ Iizinki zobushushu kunye nezisasazi zobushushu
✔ Izithinteli zombane zeelaser
✔ IiChucks, amakhonkco okubamba izixhobo zokusetyenzwa kwe-semiconductor
✔ Izithinteli zombane
✔ Ukuphathwa kweSilicon wafer kunye nokulungiswa
✔ Iisubstrates & insulators zemicroelectronic devices & opto electronic devices
✔ Iisubstrates zeepakethe zombane
✔ Abathwali be-Chip kwi-sensor kunye ne-detectors
✔ IiChiplets
✔ IiCollets
✔ Amacandelo olawulo lobushushu beLaser
✔ Izinto ezinyibilikayo zentsimbi
✔ Iipakethi zezixhobo ze-microwave
Iimpahla zeMathiriyeli
Oomatshini | IiYunithi zoMlinganiselo | SI/Metric | (Impiriyali) |
Ukuxinana | gm/cc (lb/ft3) | 3.26 | -203.5 |
I-Porosity | % (%) | 0 | 0 |
Umbala | — | ngwevu | — |
Amandla e-Flexural | IMPa (lb/in2x103) | 320 | -46.4 |
Imodyuli ye-elastic | I-GPa (lb/in2x106) | 330 | -47.8 |
Shear Modulus | I-GPa (lb/in2x106) | — | — |
Iimodyuli ezininzi | I-GPa (lb/in2x106) | — | — |
Umlinganiselo wePoisson | — | 0.24 | -0.24 |
Amandla acinezelayo | IMPa (lb/in2x103) | 2100 | -304.5 |
Ukuqina | Kg/mm2 | 1100 | — |
Ukuqina Kokwaphuka KIC | MPa•m1/2 | 2.6 | — |
Ubushushu bokusebenzisa kakhulu | °C (°F) | — | — |
(akukho mthwalo) |
Thermal |
|
|
|
I-Thermal Conductivity | W/m•°K (BTU•in/ft2•iyure•°F) | 140–180 | (970–1250) |
I-Coefficient yoKwandiswa kweThermal | 10–6/°C (10–6/°F) | 4.5 | -2.5 |
Ubushushu obuthile | J/Kg•°K (Btu/lb•°F) | 740 | -0.18 |
Umbane |
|
|
|
Amandla eDielectric | ac-kv/mm (volts/mil) | 17 | -425 |
Dielectric Constant | @ 1MHz | 9 | -9 |
I-Disipation Factor | @ 1MHz | 0.0003 | -0.0003 |
Ilahleko yeTangenti | @ 1MHz | — | — |
Ukuxhathisa uMqulu | ohm•cm | >1014 | — |
Ukupakishwa kunye nokuThunyelwa
Xiamen Wintrustek Advanced Materials Co., Ltd.
Idilesi:No.987 Huli Hi-Tech Park, Xiamen, China 361009
Ifowuni:0086 13656035645
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INTENGISO
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