UMBUZO

IAluminium Nitride AlN Ceramic Cylinder

IAluminium Nitride AlN Ceramic Cylinder
  • Ubuninzi: 3.31 g/cm3
  • Amandla oxinzelelo: 2100 MPa
  • Ukuqina (Vickers): 11 GPa
  • IINKCUKACHA ZEMVELISO

Ingcaciso yeMveliso

 

I-Aluminium Nitride, ifomula ye-AlN, yinto entsha kusapho lweekeramics zobugcisa. Ngelixa ukufunyanwa kwayo kwenzeka kwiminyaka eyi-100 eyadlulayo, iye yaphuhliswa yaba yimveliso enokuthengiseka eneempawu ezilawulwayo nezinokuveliswa kwakhona kwiminyaka engama-20 edlulileyo.


I-Aluminiyamu nitride inesakhiwo sekristale esinehexagonal kwaye iyimpahla edibeneyo edibeneyo. Ukusetyenziswa kwezixhobo zokucoca kunye nokucinezela okushushu kuyafuneka ukuvelisa izinto ezixineneyo zebakala lobugcisa. Izinto eziphathekayo zizinzileyo kumaqondo okushisa aphezulu kakhulu kwi-inert atmospheres. Emoyeni, i-oxidation yomphezulu iqala ngaphezu kwama-700°C. Umaleko we-aluminiyam oksayidi iifom ezikhusela imathiriyeli ukuya kuthi ga kwi-1370°C. Ngaphezulu kobu bushushu bubuninzi be oxidation yenzeka. I-aluminiyam nitride izinzile kwi-hydrogen kunye ne-carbon dioxide atmosphere ukuya kuma-980°C.


Izinto eziphathekayo zinyibilika ngokucothayo kwii-asidi zeminerali ngokuhlaselwa komda wokuziinkozo, nakwi-alkalis eyomeleleyo ngokuhlaselwa kweenkozo ze-aluminiyam nitride. Isixhobo se-hydrolyzes kancinci emanzini. Uninzi lwezicelo zangoku zikwindawo yombane apho ukususwa kobushushu kubalulekile. Esi sixhobo sinomdla njengenye indlela engeyiyo ityhefu kwi-beryllia. Iindlela ze-Metallization ziyafumaneka ukuvumela ukuba i-AlN isetyenziswe endaweni ye-alumina kunye ne-BeO kwizicelo ezininzi ze-elektroniki

 

 Iipropati Zomzimba

 

 Iimpawu ezilungileyo ze-dielectric

 I-conductivity ephezulu ye-thermal

 I-coefficient yokwandisa i-thermal ephantsi, kufutshane ne-Silicon

 I-non-reactive kunye neekhemikhali eziqhelekileyo zenkqubo ye-semiconductor kunye neegesi

 

Usetyenziso

 

 Iizinki zobushushu kunye nezisasazi zobushushu

 Izithinteli zombane zeelaser

 IiChucks, amakhonkco okubamba izixhobo zokusetyenzwa kwe-semiconductor

 Izithinteli zombane

 Ukuphathwa kweSilicon wafer kunye nokulungiswa

 IiSubstrates & insulators zemicroelectronic devices & opto electronic devices

 Iisubstrates zeepakethe zombane

 Abathwali be-Chip kwi-sensor kunye ne-detectors

 IiChiplets

 IiCollets

 Amacandelo olawulo lobushushu beLaser

 Izinto ezinyibilikayo zentsimbi

 Iipakethi zezixhobo ze-microwave

Iimpahla zeMathiriyeli

Oomatshini

IiYunithi zoMlinganiselo

SI/Metric

(Impiriyali)

Ukuxinana

gm/cc (lb/ft3)

3.26

-203.5

I-Porosity

% (%)

0

0

Umbala

ngwevu

Amandla e-Flexural

IMPa (lb/in2x103)

320

-46.4

Imodyuli ye-elastic

I-GPa (lb/in2x106)

330

-47.8

Shear Modulus

I-GPa (lb/in2x106)

Iimodyuli ezininzi

I-GPa (lb/in2x106)

Umlinganiselo wePoisson

0.24

-0.24

Amandla acinezelayo

IMPa (lb/in2x103)

2100

-304.5

Ukuqina

Kg/mm2

1100

Ukuqina Kokwaphuka KIC

MPa•m1/2

2.6

Ubushushu bokusebenzisa kakhulu

°C (°F)

(akukho mthwalo)

Thermal




I-Thermal Conductivity

W/m•°K (BTU•in/ft2•iyure•°F)

140–180

(970–1250)

I-Coefficient yoKwandiswa kweThermal

10–6/°C (10–6/°F)

4.5

-2.5

Ubushushu obuthile

J/Kg•°K (Btu/lb•°F)

740

-0.18

Umbane




Amandla eDielectric

ac-kv/mm (volts/mil)

17

-425

Dielectric Constant

@ 1MHz

9

-9

I-Disipation Factor

@ 1MHz

0.0003

-0.0003

Ilahleko yeTangenti

@ 1MHz

Ukuxhathisa uMqulu

ohm•cm

>1014



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