Ngoku, ingxokozelo ekhulayo yokukhuselwa kwendalo kunye nogcino lwamandla yenze ukuba izithuthi zombane zasekhaya zibonakale. Izixhobo zepakethe yamandla aphezulu zidlala indima ebalulekileyo ekulawuleni isantya sesithuthi kunye nokugcina ukuguqula i-AC ne-DC. I-high-frequency thermal cycling ibeke iimfuno ezingqongqo zokutshatyalaliswa kobushushu bepakethe yombane, ngelixa ubunzima kunye nokwahluka kwendawo yokusebenza kufuna izinto zokupakisha ukuba zibe nokumelana nokutshatyalaliswa kwe-thermal kunye namandla aphezulu okudlala indima exhasayo. Ukongeza, ngophuhliso olukhawulezayo lwetekhnoloji ye-elektroniki yamandla anamhlanje, ebonakaliswa ngamandla ombane aphezulu, akhoyo ngoku, kunye namaza omoya aphezulu, ukusebenza kakuhle kokutshabalalisa ubushushu kwiimodyuli zamandla ezisetyenziswa kobu buchwepheshe kuye kwabaluleka ngakumbi. Izinto ze-ceramic substrate kwiisistim zokupakisha ze-elektroniki ziyisitshixo sokuchithwa kobushushu ngokufanelekileyo, nazo zinamandla aphezulu kunye nokuthembeka ekuphenduleni ubunzima bendawo yokusebenza. Ii-substrates eziphambili ze-ceramic eziye zaveliswa ngobuninzi kwaye zisetyenziswa ngokubanzi kwiminyaka yamuva ziyi-Al2O3, i-BeO, i-SiC, i-Si3N4, i-AlN, njl.

I-Al2O3 ceramic idlala indima ebalulekileyo kushishino lwesubstrate yokulahla ubushushu ngokusekwe kwinkqubo yayo yokulungisa elula, ukugquma okulungileyo kunye nokumelana nobushushu obuphezulu. Nangona kunjalo, i-thermal conductivity ephantsi ye-Al2O3 ayinakukwazi ukuhlangabezana neemfuno zophuhliso zamandla aphezulu kunye nesixhobo sombane ophezulu, kwaye isebenza kuphela kwindawo yokusebenza eneemfuno ezisezantsi zokulahla ubushushu. Ngaphezu koko, amandla okugoba aphantsi nawo anciphisa umda wokusetyenziswa kweekeramikhi ze-Al2O3 njengeenxalenye ezisezantsi zokuchitha ubushushu.

Ii-substrates ze-BeO ceramic zine-conductivity ephezulu ye-thermal kunye ne-dielectric ephantsi rhoqo ukuhlangabezana neemfuno zokutshatyalaliswa kobushushu obusebenzayo. Kodwa ayihambelani nesicelo esikhulu ngenxa yetyhefu, echaphazela impilo yabasebenzi.

I-AlN ceramic ithathwa njengesixhobo somgqatswa wesubstrate yokulahla ubushushu ngenxa yokuhanjiswa kwe-thermal ephezulu. Kodwa i-AlN ceramic inokumelana nokothuka kwe-thermal, ubugwenxa obulula, ukomelela okuphantsi kunye nokuqina, okungakuncediyo ukusebenza kwindawo enzima, kwaye kunzima ukuqinisekisa ukuthembeka kwezicelo.

I-SiC ceramic ine-thermal conductivity ephezulu, ngenxa yelahleko ephezulu ye-dielectric kunye ne-low breakdown voltage, ayifanelekanga ukusetyenziswa kwi-high frequency kunye neendawo zokusebenza zombane.

I-Si3N4 ibonwa njengeyona mathiriyeli yeceramic substrate ene-thermal conductivity ephezulu kunye nokuthembeka okuphezulu ekhaya naphesheya. Nangona i-thermal conductivity ye-Si3N4 ye-ceramic substrate ingaphantsi kancinane kune-AlN, amandla ayo okuguquguquka kunye nokuqina kwe-fracture inokufikelela ngaphezu kokuphindwe kabini kwe-AlN. Okwangoku, i-thermal conductivity ye-Si3N4 ceramic iphezulu kakhulu kune-Al2O3 ceramic. Ukongeza, i-coefficient yokwandiswa kwe-thermal ye-Si3N4 ceramic substrates isondele kuleyo yeekristale ze-SiC, i-3rd generation semiconductor substrate, eyenza ukuba ihambelane ngokuzinzileyo ne-SiC crystal imathiriyeli. Yenza i-Si3N4 ibe yimathiriyeli ekhethwayo kwi-substrates ephezulu ye-thermal conductivity ye-3rd generation SiC semiconductor power devices.