Njengoko iisekethe ezidibeneyo ziye zaba lishishini lelizwe elinobuchule, izixhobo ezininzi ze-semiconductor ziye zaphandwa kwaye zaphuhliswa, kwaye i-Aluminium Nitride ngokungathandabuzekiyo yenye yezona zinto zithembisayo ze-semiconductor.
Iimpawu zokuSebenza kweAluminiyam Nitride
I-Aluminium Nitride (i-AlN) ineempawu zamandla aphezulu, amandla aphezulu okuxhathisa, amandla ombane aphezulu, i-coefficient yokwandiswa kwe-thermal, ukuhambelana kakuhle ne-silicon, njl. kwintsimi yee-substrates ze-elektroniki ze-ceramic kunye nezixhobo zokupakisha, eziye zakhula kwiminyaka yamuva nje, kwaye ukusebenza kwayo kudlula kakhulu kwi-Alumina. I-Aluminium Nitride ceramics inomsebenzi ogqwesileyo jikelele, ilungele i-semiconductor substrates kunye ne-structural package materials, kwaye inamandla okusebenza abalulekileyo kwishishini le-elektroniki.
Ukusetyenziswa kweAluminiyam Nitride
1. Usetyenziso lwesixhobo sePiezoelectric
I-Aluminium Nitride ine-resistiveivity ephezulu, i-thermal conductivity ephezulu, kunye ne-coefficient ephantsi yokwandiswa okufana ne-silicon, eyona nto ifanelekileyo kwi-high-temperature kunye ne-high-power-electronic devices.
2. Imathiriyeli yokupakishwa kwe-elektroniki
I-Beryllium Oxide, i-Alumina, i-Silicon Nitride, kunye ne-Aluminium Nitride zezinye zezinto eziqhelekileyo ezisetyenziselwa i-ceramic substrates.
Phakathi kwezinto ezikhoyo ze-ceramic ezinokuthi zisetyenziswe njenge-substrate materials, ii-ceramics ze-Silicon Nitride zinamandla aphakamileyo aguquguqukayo, ukuxhathisa okulungileyo, kunye neyona nto ifanelekileyo yomatshini wezixhobo ze-ceramic, ngelixa i-coefficient yabo yokwandiswa kwe-thermal incinci. I-Aluminiyamu ye-Nitride ceramics ine-conductivity ephezulu ye-thermal, i-thermal resistance resistance, kwaye iseneempawu ezilungileyo zoomatshini kumaqondo aphezulu. Kunokuthiwa, ukusuka kwindawo yokujonga ukusebenza, i-Aluminium Nitride kunye neSilicon Nitride okwangoku iyona nto ifanelekileyo yokusetyenziswa njengezixhobo ze-elektroniki zokupakisha i-substrate, kodwa nazo zinengxaki eqhelekileyo: ixabiso labo liphezulu.
3. Ukusetyenziswa kwizinto ezikhupha ukukhanya
Ngokubhekiselele ekusebenzeni kokuguqulwa kwe-photoelectric, i-aluminium nitride (i-AlN) ine-bandgap ngqo ye-semiconductor band ububanzi obukhulu be-6.2 eV, ephakamileyo kune-indirect bandgap semiconductor. I-AlN, njengento ebalulekileyo eluhlaza okwesibhakabhaka kunye ne-ultraviolet-emitting material, isetyenziselwa i-ultraviolet kunye ne-ultraviolet ejulile ye-ultraviolet-emitting diodes, i-ultraviolet laser diodes, i-ultraviolet detectors, njl. isisombululo, kunye ne-gap yebhendi ye-alloy yayo ye-ternary okanye ye-quaternary inokulungelelaniswa ngokuqhubekayo ukusuka kwibhanti ebonakalayo ukuya kwi-deep ultraviolet band, okwenza kube yinto ebalulekileyo yokukhanya okuphezulu okukhupha ukukhanya.
4. Ukusetyenziswa kwezixhobo ze-substrate
I-crystal ye-AlN yeyona nto ifanelekileyo ye-GaN, i-AlGaN, kunye ne-AlN epitaxial materials. Xa kuthelekiswa ne-sapphire okanye i-SiC substrates, i-AlN kunye ne-GaN inokulinganisa okungcono kwe-thermal kunye nokuhambelana kweekhemikhali, kwaye uxinzelelo phakathi kwe-substrate kunye ne-epitaxial layer incinci. Ngoko ke, i-AlN crystals njenge-GaN epitaxial substrates inokunciphisa kakhulu ubuninzi besiphako kwisixhobo kwaye iphucule ukusebenza kwayo, enethemba elihle kakhulu lokusetyenziswa ekulungiseleleni ubushushu obuphezulu, i-high-frequency, kunye nezixhobo zombane eziphezulu. Ukongeza, ukusebenzisa i-AlN crystals njenge-AlGaN epitaxial material substrate enezixhobo eziphezulu ze-aluminium (Al) nazo zinokunciphisa ngempumelelo ubuninzi besiphako kwi-nitride epitaxial layer kunye nokuphucula kakhulu ukusebenza kunye nobomi bezixhobo ze-nitride semiconductor. Ngokusekwe kwi-AlGaN, isixhobo sokubona ubumfama esikumgangatho ophezulu sisetyenziswe ngempumelelo.
5. Ukusetyenziswa kweekeramics kunye nezixhobo ezichasayo
I-Aluminium Nitride ingasetyenziswa kwi-ceramic sintering yesakhiwo; i-Aluminium Nitride ceramics elungisiweyo ayinayo kuphela iipropati ezingcono zoomatshini kunye namandla aguquguqukayo kune-Al2O3 kunye neekeramics ze-BeO, kodwa kunye nobunzima obuphezulu kunye nokumelana nokunyuka. ezinye iindawo ezinobushushu obuphezulu bokumelana nomhlwa. Ukongeza, iikeramikhi ezicocekileyo ze-AlN zeekristale ezingabonakali mbala ezingenambala, ezineempawu ezibalaseleyo zamehlo, zinokusetyenziswa njenge-ceramics ecacileyo yezixhobo ze-elektroniki ze-optical device kunye nezixhobo zeefestile ezinobushushu obuphezulu kunye ne-rectifier-resistant-resistant coating.