Ukupakishwa kwe-elektroniki, ii-substrates ze-ceramic zidlala indima ephambili ekudibaniseni imijelo yangaphakathi nangaphandle yokutshatyalaliswa kobushushu, kunye nokudibanisa kombane kunye nenkxaso yomatshini. Ii-substrates ze-Ceramic zineenzuzo zokuqhuba okuphezulu kwe-thermal, ukumelana nobushushu obuhle, amandla aphezulu omatshini, kunye ne-coefficient ephantsi yokwandiswa kwe-thermal, kwaye zizinto eziqhelekileyo ze-substrate yokupakishwa kwesixhobo se-semiconductor yamandla.
Ngokumalunga nesakhiwo kunye nenkqubo yokuvelisa, i-ceramic substrates ihlelwa kwiindidi ezi-5.
Ubushushu obuphezulu be-Co-fired Multilayer Ceramic Substrates (HTCC)
IiSubstrate zeCeramic eziphantsi kobushushu obuphantsi (LTCC)
IiSubstrates zeCeramic yeFilimu eThick (TFC)
IiSubstrate zeCeramic zeCeramic eziBonde ngokuNgqo (DBC)
IiSubstrate zeCeramic zeCeramic eziPlated Ngqo (DPC)
Iinkqubo ezahlukeneyo zeMveliso
Direct Bonded Copper (DBC) substrate ceramic iveliswa ngokudibanisa ioksijini phakathi kobhedu kunye neceramic ukufumana isisombululo seCu-O eutectic phakathi kwe-1065~1083℃, ilandelwa yimpendulo yokufumana isigaba esiphakathi (CuAlO2 okanye iCuAl2O4), ngaloo ndlela iqonda indibaniselwano yekhemikhali yesinyithi. ye-Cu ipleyiti kunye ne-ceramic substrate, kwaye ke ekugqibeleni ukuqonda ukulungiswa kwemizobo ngeteknoloji ye-lithography ukwenza isekethe.
I-coefficient yokwandisa i-thermal ye-substrate ye-DBC isondele kakhulu kwizinto ze-LED ze-epitaxial, ezinokunciphisa kakhulu uxinzelelo lwe-thermal oluveliswa phakathi kwe-chip kunye ne-substrate.
I-Direct Plated Copper (DPC) isubstrate ye-ceramic yenziwe ngokufafaza umaleko wobhedu kwi-substrate ye-ceramic, emva koko iveze, ifakwe, ifakwe ifilim, kwaye ekugqibeleni inyuse ubukhulu bomgca wobhedu nge-electroplating okanye i-chemical plating, emva kokususa iphotoresist, umgca wesinyithi ugqityiwe.
Izinto ezahlukeneyo eziluncedo kunye nezingeloncedo
Izinto ezilungileyo zeDBC Ceramic Substrate
Ekubeni i-foil yobhedu ine-conductivity efanelekileyo yombane kunye ne-thermal, i-DBC ineenzuzo zokuqhuba kakuhle kwe-thermal, ukugquma okulungileyo, ukuthembeka okuphezulu, kwaye isetyenziswe ngokubanzi kwiiphakheji ze-IGBT, LD, kunye ne-CPV. Ngokukodwa ngenxa ye-foil yobhedu engqindilili (100 ~ 600μm), ineenzuzo ezicacileyo kwintsimi ye-IGBT kunye ne-LD yokupakisha.
Ububi be-DBC Ceramic Substrate
Inkqubo yokuvelisa isebenzisa i-eutectic reaction phakathi kwe-Cu kunye ne-Al2O3 kwiqondo lokushisa eliphezulu, elifuna umgangatho ophezulu wezixhobo zokuvelisa kunye nokulawulwa kwenkqubo, ngaloo ndlela yenza ixabiso eliphezulu.
Ngenxa yesizukulwana esilula se-microporosity phakathi kwe-Al2O3 kunye ne-Cu layer, enciphisa ukuxhathisa ukutshatyalaliswa kwe-thermal yemveliso, ezi zinto zingeloncedo ziba yi-bottleneck ye-DBC substrate promotion.
Izinto eziluncedo zeDPC Ceramic Substrate
Inkqubo yokushisa ephantsi (ngaphantsi kwe-300 ° C) isetyenziswa, ekhusela ngokupheleleyo imiphumo emibi yokushisa okuphezulu kwizinto eziphathekayo okanye kwisakhiwo somgca, kunye nokunciphisa iindleko zenkqubo yokuvelisa.
Ukusetyenziswa kwefilimu encinci kunye neteknoloji ye-photolithography, ukwenzela ukuba i-substrate kumgca wentsimbi, ngoko i-substrate ye-DPC ilungele ukulungelelaniswa kweemfuno ezichanekileyo ezichanekileyo zokupakishwa kwezixhobo zombane.
Izinto ezingeloncedo kwi-DPC Ceramic Substrate
Ubungqingqwa obuncinci bomaleko wobhedu ofakwe kwi-electroplated kunye nongcoliseko oluphezulu lwesisombululo senkunkuma ye-electroplating.
Amandla okudibanisa phakathi komgangatho wetsimbi kunye ne-ceramic iphantsi, kwaye ukuthembeka kwemveliso kuphantsi xa kusetyenziswe.
