Pyrolytic Boron Nitride Alaabta PBN
Pyrolytic Boron Nitride (PBN) waxaa sameeyay habka loo yaqaan 'Chemical Vapor Deposition' (CVD) kaas oo gaaska ammonia (NH3) iyo gaaska boron halide sida boron trichloride (BCI3) ay uga falceliyaan foornada CVD heerkulkeedu sarreeyo si loo dhigo. PBN on substrate ku habboon sida Pyrolytic Graphite.
PBN waxaa loo yaqaanaa doorasho aad u fiican oo loogu talagalay foornada heerkulka sare leh iyo qaybaha korantada, semiconductor, iyo kiristaalo ka samaysan microwave sida germanium (Ge), gallium arsenide (GaAs), iyo indium phosphate (InP) taas oo ay ugu wacan tahay nadiifnimadeeda gudaha, sifooyinka farsamada sare , iyo xasilloonida physicochemical. PBN waxay u adkeysan kartaa 1800°C faakuumka iyo 2000°C ee nitrogen, taasoo u soo bandhigaysa door wanaagsan oo loogu talagalay qaybaha foornada iyo weelasha dhalaalinta.
Qaab dhismeedka lakabka leh oo leh shabag crystal lix gees ah
Guryo gaar ah oo ku siman diyaaradda asalka ah ee crystal
Degganaanshiyaha qaabdhismeedka sare iyo kiimikaad
Qaab dhismeedka anisotropic
Deganaanshaha kulaylka sare
Aan qoynin
Aan sun ahayn
Crucibles koritaanka kiristaalo semiconductor
Tuubooyinka mowjadaha ee RF iyo microwave
Daaqadaha hoos yimaada shucaaca microwave-ka
dahaarka korontada
PBN oo leh sifooyin gaar ah iyo xasilloonida qaabdhismeedka iyo kiimikaad sare waxay noqon kartaa doorashada ugu fiican sida:
Crucibles PBN ee habka Qaboojinta Toosan (VGF).
PBN crucibles ee nidaamka Encapsulation Czochralski (LEC).
Weelasha PBN ee habka Molecular Beam Epitaxy (MBE).
Doomaha PBN oo loogu talagalay semiconductors-ka isku xiran iyo farsamaynta daawaha
PBN Metal-Organic CVD (MOCVD) looxyada dahaarka iyo giraanta dahaadhka MBE
Qalabka dahaarka korantada ee PBN ee qalabka faakuumka heerkulka sare
PBN Traveling wave tube (TWT) oo leh qaab dhismeed wareeg ah
Element Analytical | Natiijada (μg/g) | Element Analytical | Natiijada (μg/g) |
Li | <0.005 | Si | 1.7 |
F | <0.005 | CI | <0.005 |
Na | <0.005 | S | <0.005 |
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