Aluminium Nitride, formula AlN, waa walxo ku cusub qoyska dhoobada farsamada. Iyadoo daahfurkeedu uu dhacay 100 sano ka hor, waxa loo sameeyay badeecad ganacsi ahaan shaqayn karta oo leh hanti la kontoroolo oo la taran karo 20kii sano ee la soo dhaafay.
Aluminium nitride waxa ay leedahay qaab-dhismeedka crystal-ka ee laba geesoodka ah waana walxo isku xidhan. Isticmaalka aaladaha sintering iyo cadaadis kulul ayaa loo baahan yahay si loo soo saaro qalab heer farsamo cufan. Maaddadu waxay ku xasilloon tahay heerkul aad u sarreeya jawiga aan firfircoonayn. Hawada, oksaydheynta dusha sare waxay ka bilaabataa 700 ° C. Lakabka aluminium oxide ayaa samaysma kaas oo ilaaliya walxaha ilaa 1370°C. Heerkulkan ka sarreeya oksaydheynta weyn ayaa dhacda. Aluminium nitride waxay ku xasilloon tahay hawada hydrogen iyo kaarboon laba ogsaydh ilaa 980°C.
Maaddadu si tartiib ah ayay ugu milmaysaa asiidhyada macdanta iyada oo loo marayo weerarka xadka hadhuudhka, iyo alkalis xooggan iyada oo la weerarayo miraha nitride aluminium. Maaddadu si tartiib tartiib ah ayey biyaha ugu jirtaa. Inta badan codsiyada hadda jira waxay ku yaalaan aagga elektiroonigga ah halkaasoo ka saarista kulaylku ay muhiim tahay. Qalabkani waa mid xiiso leh sida beddelka aan sunta ahayn ee beryllia. Hababka biraha birta ayaa diyaar ah si loogu oggolaado AlN in loo isticmaalo beddelka alumina iyo BeO codsiyo badan oo elektaroonig ah
✔ Guryaha dielectric wanaagsan
✔ Dhaqdhaqaaqa kulaylka sare
✔ Isku xidhka ballaadhinta kulaylka hooseeya, una dhow kan Silikoon
✔ Aan falcelin lahayn oo leh kiimikooyinka habka semiconductor caadiga ah iyo gaasaska
✔ Heerarka kulaylka & kuleylka kuleylka
✔ Dahamiyayaal koronto oo loogu talagalay laysarka
✔ Chucks, giraanta ku dheji qalabka wax qabad ee semiconductor
✔ dahamiyayaal koronto
✔ Maaraynta iyo farsamaynta waferka silikoonka
✔ Substrates & insulators ee aaladaha microelectronic & opto eletroonig
✔ Substrates baakadaha elektiroonigga ah
✔ Chip sideyaasha dareemayaasha iyo baaraha
✔ Chiplets
✔ Collets
✔ Qaybaha maaraynta kulaylka laser
✔ Qalabka birta ah ee dhalaalay
✔ Baakadaha loogu talagalay aaladaha microwave-ka
Makaanik | Unugyada Cabbirka | SI/Metric | (Imperial) |
Cufnaanta | gm/cc (lb/ft3) | 3.26 | -203.5 |
Porosity | % (%) | 0 | 0 |
Midabka | — | cawlan | — |
Xoog Jilicsan | MPa (lb/in2x103) | 320 | -46.4 |
Qalabka Elastic | GPA (lb/in2x106) | 330 | -47.8 |
Modul jeex | GPA (lb/in2x106) | — | — |
Bulk Modulus | GPA (lb/in2x106) | — | — |
Saamiga Poisson | — | 0.24 | -0.24 |
Xoog isku dhejisan | MPa (lb/in2x103) | 2100 | -304.5 |
Adag | Kg/mm2 | 1100 | — |
Adag jabka KIC | MPa•m1/2 | 2.6 | — |
Heerkulka Isticmaalka ugu badan | °C (°F) | — | — |
(wax rar ah malaha) | |||
Kulul | |||
Habdhaqanka kulaylka | W/m•°K (BTU•in/ft2•saac•°F) | 140–180 | (970–1250) |
Isku-dhafka Balaadhinta kulaylka | 10–6/°C (10–6/°F) | 4.5 | -2.5 |
Kuleylka Gaarka ah | J/Kg•°K (Btu/lb•°F) | 740 | -0.18 |
Koronto | |||
Xoogga Dielectric | ac-kv/mm (volts/mil) | 17 | -425 |
Dielectric Constant | @ 1 MHz | 9 | -9 |
Qodobka Burburinta | @ 1 MHz | 0.0003 | -0.0003 |
Tangent Khasaare | @ 1 MHz | — | — |
Iska caabbinta mugga | ohm•cm | >1014 | — |
Baakadaha & Rarista
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