Aluminium Nitride (AlN) yashizwemo bwa mbere mu 1877, ariko uburyo bwayo bushobora gukoreshwa muri mikorobe ya elegitoronike ntabwo bwateje imbere iterambere ry’ibikoresho byo mu rwego rwo hejuru, bifite ubucuruzi kugeza mu myaka ya za 1980 rwagati.
AIN nuburyo bwa nitrate ya aluminium. Nitride ya aluminiyumu itandukanye na nitrate ya aluminium kubera ko ari uruganda rwa azote rufite imiterere ya okiside ya -3, mu gihe nitrate yerekeza kuri ester cyangwa umunyu wa acide ya nitric. Ibikoresho bya kristu yububiko ni wurtzite ya mpande esheshatu.
Synthesis ya AIN
AlN ikorwa hifashishijwe kugabanya karubothermal ya alumina cyangwa nitridation itaziguye ya aluminium. Ifite ubucucike bwa 3.33 g / cm3 kandi, nubwo idashonga, itandukana ku bushyuhe buri hejuru ya 2500 ° C hamwe n’umuvuduko w’ikirere. Hatabayeho ubufasha bwongewemo ibintu byamazi, ibikoresho birahujwe kandi birwanya gucumura. Mubisanzwe, okiside nka Y2O3 cyangwa CaO yemerera gucengera mubushyuhe buri hagati ya dogere selisiyusi 1600 na 1900.
Ibice bikozwe muri nitride ya aluminiyumu birashobora gukorwa hakoreshejwe uburyo butandukanye, harimo gukanda isostatike ikonje, gushushanya inshinge za ceramic, gushiramo inshinge nkeya, gushushanya kaseti, gutunganya neza, no gukanda byumye.
Ibintu by'ingenzi
AlN ntishobora kubuza ibyuma byinshi byashongeshejwe, harimo aluminium, lithium, n'umuringa. Ntibisanzwe kubwinshi bwumunyu ushongeshejwe, harimo chloride na cryolite.
Nitride ya aluminiyumu ifite ubushyuhe bwinshi (170 W / mk, 200 W / mk, na 230 W / mk) hamwe n’umuvuduko mwinshi hamwe nimbaraga za dielectric.
Irashobora kwibasirwa na hydrolysis muburyo bwa poro iyo ihuye namazi cyangwa ubuhehere. Byongeye kandi, acide na alkalis byibasiye nitride ya aluminium.
Ibi bikoresho ni insuliranteri y'amashanyarazi. Doping yongerera amashanyarazi ibikoresho. AIN yerekana ibintu bya piezoelectric.
Porogaramu
Microelectronics
Ikintu kigaragara cyane kiranga AlN nubushyuhe bwo hejuru bwumuriro, bukaba ubwa kabiri nyuma ya beryllium mubikoresho byubutaka. Ubushyuhe buri munsi ya dogere selisiyusi 200, ubushyuhe bwacyo burenze ubw'umuringa. Uku guhuza imbaraga nyinshi, kutarwanya amajwi, hamwe nimbaraga za dielectric bifasha kuyikoresha nka substrate no gupakira kumashanyarazi menshi cyangwa mikorobe ya elegitoroniki yibice byinshi. Gukenera gukwirakwiza ubushyuhe buterwa nigihombo cya ohmic no kugumana ibice biri murwego rwubushyuhe bwabyo ni kimwe mubintu bigabanya ubukana bwo gupakira ibikoresho bya elegitoroniki. AlN substrates itanga ubukonje bukomeye kuruta ibisanzwe nibindi bikoresho byubutaka, niyo mpamvu bikoreshwa nkabatwara chip hamwe nubushyuhe.
Aluminium nitride isanga ubucuruzi bwamamaye muri filteri ya RF kubikoresho byitumanaho rigendanwa. Igice cya nitride ya aluminium iri hagati yibyuma bibiri. Porogaramu zisanzwe mu bucuruzi zirimo izirinda amashanyarazi hamwe n’ibikoresho byo gucunga ubushyuhe muri lazeri, chipleti, koleji, insulator zikoresha amashanyarazi, impeta za clamp mu bikoresho bitunganya semiconductor, hamwe nububiko bwa microwave.
Ibindi Porogaramu
Bitewe n'amafaranga ya AlN, ibyasabwe mu mateka byagarukiye gusa mu kirere cya gisirikare no mu bwikorezi. Nyamara, ibikoresho byizwe cyane kandi bikoreshwa mubice bitandukanye. Ibikoresho byayo byiza bituma bikwiranye ninganda zingirakamaro zikoreshwa mu nganda.
Inganda za AlN zirimo inganda zivunagura kugirango zikoreshe ibyuma bishongeshejwe hamwe na sisitemu yo guhanahana ubushyuhe.
Ibi bikoresho bikoreshwa mukubaka umusaraba kugirango imikurire ya kristu ya gallium arsenide kandi ikoreshwa no mubikorwa byibyuma na semiconductor.
Ibindi byifuzo byo gukoresha nitride ya aluminium harimo nka sensor ya chimique ya gaze yuburozi. Gukoresha AIN nanotubes kugirango ubyare quasi-imwe-imwe ya nanotubes yo gukoresha muribi bikoresho byabaye ubushakashatsi. Mu myaka 20 ishize, hakozwe ubushakashatsi kuri diode itanga urumuri rukora muri ultraviolet. Ikoreshwa rya firime yoroheje AIN mubuso bwa acoustic wave sensor yarasuzumwe.
