Incazelo Yomkhiqizo
I-Aluminium Nitride, ifomula i-AlN, iyinto entsha emndenini we-ceramics yobuchwepheshe. Nakuba ukutholakala kwayo kwenzeka eminyakeni eyi-100 edlule, iye yathuthukiswa yaba umkhiqizo okwaziyo ukuhwebelana onezindawo ezilawulwayo nezikwazi ukukhiqizwa phakathi neminyaka engama-20 edlule.
I-Aluminium nitride ine-hexagonal crystal structure futhi iyimpahla eboshiwe ehlangene. Ukusetshenziswa kwezinsiza-sintering nokucindezela okushisayo kuyadingeka ukuze kukhiqizwe impahla yebanga lobuchwepheshe eliminyene. Okubalulekile kuzinzile emazingeni okushisa aphezulu kakhulu emkhathini ongenayo. Emoyeni, i-oxidation yangaphezulu iqala ngaphezu kuka-700°C. Ungqimba lwe-aluminiyamu oxide lwakha amafomu oluvikela impahla kufika ku-1370°C. Ngaphezu kwaleli zinga lokushisa kwenzeka inqwaba ye-oxidation. I-Aluminium nitride izinzile ku-hydrogen ne-carbon dioxide emkhathini kuze kufike ku-980°C.
Izinto ezisetshenziswayo zincibilika kancane kuma-asidi amaminerali ngokuhlaselwa komngcele wokusanhlamvu, futhi kuma-alkali aqinile ngokuhlaselwa kwezinhlamvu ze-aluminum nitride. I-hydrolyzes kancane emanzini. Iningi lezinhlelo zokusebenza zamanje zisendaweni kagesi lapho ukususwa kokushisa kubalulekile. Lokhu okuqukethwe kuyathakazelisa njengenye indlela engenabuthi esikhundleni se-beryllia. Izindlela ze-Metallization ziyatholakala ukuze kuvunyelwe i-AlN ukuthi isetshenziswe esikhundleni se-alumina ne-BeO ezinhlelweni eziningi zikagesi
Izakhiwo Zomzimba
✔ Izici ezinhle ze-dielectric
✔ High conductivity ezishisayo
✔ I-coefficient yokwandisa okushisayo ephansi, eduze naleyo ye-Silicon
✔ Ayisebenzi ngamakhemikhali namagesi enqubo ye-semiconductor evamile
Izinhlelo zokusebenza
✔ Osinki okushisa nezisakaza zokushisa
✔ Ama-insulators kagesi ama-lasers
✔ Ama-Chucks, izindandatho zokubopha zemishini yokucubungula i-semiconductor
✔ Ama-insulators kagesi
✔ Ukuphathwa kwe-Silicon wafer kanye nokucubungula
✔ Ama-substrates nama-insulators wamadivayisi e-microelectronic namadivayisi we-opto electronic
✔ Ama-substrates amaphakheji e-electronic
✔ Izithwali ze-chip zezinzwa nezitholi
✔ Ama-chiplets
✔ Ama-Collets
✔ Izingxenye zokulawula ukushisa kwe-laser
✔ Izinto zensimbi ezincibilikisiwe
✔ Amaphakheji amadivayisi we-microwave
Izinto ezibonakalayo
Omakhenikha | Amayunithi Wokulinganisa | I-SI/Metric | (Imperial) |
Ukuminyana | gm/cc (lb/ft3) | 3.26 | -203.5 |
I-Porosity | % (%) | 0 | 0 |
Umbala | — | impunga | — |
Amandla e-Flexural | I-MPa (lb/in2x103) | 320 | -46.4 |
I-Elastic Modulus | I-GPa (lb/in2x106) | 330 | -47.8 |
Shear Modulus | I-GPa (lb/in2x106) | — | — |
I-Bulk Modulus | I-GPa (lb/in2x106) | — | — |
Isilinganiso sikaPoisson | — | 0.24 | -0.24 |
Amandla Acindezelayo | I-MPa (lb/in2x103) | 2100 | -304.5 |
Ukuqina | Kg/mm2 | 1100 | — |
Ukuqina Kokuphuka KIC | MPa•m1/2 | 2.6 | — |
Ubukhulu Bezinga Lokushisa Lokusebenzisa | °C (°F) | — | — |
(awukho umthwalo) |
Okushisayo |
|
|
|
I-Thermal Conductivity | W/m•°K (BTU•in/ft2•ihora•°F) | 140–180 | (970–1250) |
I-Coefficient of Thermal Expansion | 10–6/°C (10–6/°F) | 4.5 | -2.5 |
Ukushisa Okuthize | J/Kg•°K (Btu/lb•°F) | 740 | -0.18 |
Ezogesi |
|
|
|
Amandla e-Dielectric | ac-kv/mm (volts/mil) | 17 | -425 |
I-Dielectric Constant | @ 1 MHz | 9 | -9 |
I-Disipation Factor | @ 1 MHz | 0.0003 | -0.0003 |
I-Tangent yokulahlekelwa | @ 1 MHz | — | — |
Ukumelana Nomthamo | ohm•cm | >1014 | — |
Ukupakisha Nokuthumela
I-Xiamen Wintrustek Advanced Materials Co., Ltd.
IKHELI:No.987 Huli Hi-Tech Park, Xiamen, China 361009
Ucingo:0086 13656035645
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UKUDAYISWA
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