I-Silicon carbide (i-SiC) i-ceramic material evame ukutshalwa njengekristalu eyodwa yezinhlelo zokusebenza ze-semiconductor. Ngenxa yezakhiwo zayo zemvelo kanye nokukhula kwekristalu eyodwa, ingenye yezinto ezihlala isikhathi eside ze-semiconductor emakethe. Lokhu kuqina kwedlula kude ukusebenza kwawo kagesi.

Ukuqina Okungokomzimba

Ukuqina komzimba kwe-SiC kubonakala kahle ngokuhlola izinhlelo zayo ezingezona eze-electronic: i-sandpaper, i-extrusion dies, amapuleti e-bulletproof vest, ama-brake disks asebenza kahle kakhulu, nezibasi zomlilo. I-SiC izoklwebha into esikhundleni sokuklwejwa yona. Uma isetshenziswa kuma-brake disks asebenza kahle, ukumelana kwawo nokugqoka isikhathi eside ezindaweni ezinokhahlo kuyahlolwa. Ukuze isetshenziswe njengepuleti le-bulletproof vest, i-SiC kufanele ibe nakho kokubili amandla aphezulu omzimba kanye nomthelela.

Ukuqina Kwamakhemikhali Nogesi

I-SiC idume ngokungangeni kwamakhemikhali; ayithinteki ngisho namakhemikhali anolaka kakhulu, njengama-alkali nosawoti oncibilikisiwe, ngisho nalapho echayeke emazingeni okushisa afinyelela ku-800 °C. Ngenxa yokumelana nokuhlasela kwamakhemikhali, i-SiC ayigqwali futhi ingamelana nezindawo ezinokhahlo okuhlanganisa ukuchayeka emoyeni onomswakama, amanzi anosawoti, nezinhlobonhlobo zamakhemikhali.

Njengomphumela we-bandgap yayo ephezulu yamandla, i-SiC imelana kakhulu nokuphazamiseka kazibuthe kagesi kanye nemiphumela elimazayo yemisebe. I-SiC futhi imelana kakhulu nomonakalo emazingeni aphezulu wamandla kune-Si.

I-Thermal Shock Resistance

Ukumelana kwe-SiC nokushaqeka okushisayo kungenye isici esibalulekile. Uma into ivezwe kuzinga lokushisa elidlulele, ukushaqeka kokushisa kwenzeka (okungukuthi, lapho izingxenye ezihlukene zento zisemazingeni okushisa ahluke kakhulu). Njengomphumela wale gradient yezinga lokushisa, izinga lokunwetshwa noma ukufinyela lizohluka phakathi kwezigaba ezihlukahlukene. Ukushaqeka okushisayo kungabangela ukuphuka kwezinto ezithambile, kodwa i-SiC imelana kakhulu nale miphumela. Ukumelana nokushaqeka okushisayo kwe-SiC kuwumphumela we-thermal conductivity yayo ephezulu (350 W/m/K ngekristalu eyodwa) kanye nokwanda okuphansi kokushisa okuphansi uma kuqhathaniswa nenqwaba yezinto zokwakha ze-semiconductor.

Ama-electronics we-SiC (isb., ama-MOSFET nama-Schottky diode) asetshenziswa ezinhlelweni ezinezimo ezinolaka, njengama-HEV nama-EV, ngenxa yokuqina kwawo. Iwumsebenzi omuhle kakhulu ongasetshenziswa ezinhlelweni ze-semiconductor edinga ubulukhuni nokwethembeka ngenxa yokuqina kwayo ngokomzimba, amakhemikhali, kanye nogesi.