IiMveliso zePyrolytic Boron Nitride PBN
IPyrolytic Boron Nitride (PBN) yenziwe yinkqubo eyaziwayo yeChemical Vapor Deposition (CVD) apho irhasi yeammonia (NH3) kunye negesi yeboron halide efana neboron trichloride(BCI3) isabela kwiziko lobushushu obuphezulu leCVD ukuze idipozithwe. I-PBN kwi-substrate efanelekileyo njengePyrolytic Graphite.
I-PBN yaziwa njengolona khetho lubalaseleyo kwiziko lobushushu obuphezulu kunye namalungu ombane, isemiconductor, kunye neekristale ezixubileyo zemicrowave ezifana negermanium (Ge), gallium arsenide (GaAs), kunye ne-indium phosphate (InP) ngenxa yobunyulu bayo obungaphakathi, iipropathi ezigqwesileyo zomatshini. , kunye nokuzinza kwe-physicochemical. I-PBN inokumelana ne-1800 ° C kwi-vacuum kunye ne-2000 ° C kwi-nitrogen, ukuyizisa njengento efanelekileyo yokukhetha izixhobo zesithando somlilo kunye neenqanawa ezinyibilikayo.
Ulwakhiwo olunamaleko anehexagonal crystal lattice
Iipropati ezikhethekileyo ezihambelana ne-basal plane ye-crystal
Ubume obuphezulu kunye nokuzinza kwe-physicochemical
Ubume be-Anisotropic
Ukuzinza okuphezulu kwe-thermal
Ukungamanzi
Ayinatyhefu
IiCrucibles zokukhula kweekristale ze-semiconductor
Iityhubhu zamaza zeRF kunye nemicrowave
IiWindows eziphantsi kwemitha ye-microwave
Isigqubuthelo sombane
I-PBN eneepropati ezizodwa kunye nozinzo oluphezulu lwesakhiwo kunye ne-physicochemical inokuba lolona khetho lungcono njenge:
I-PBN crucibles yenkqubo ye-Vertical Gradient Freezing (VGF).
I-PBN crucibles yenkqubo ye-Liquid Encapsulation Czochralski (LEC).
Izikhongozeli ze-PBN zenkqubo ye-Molecular Beam Epitaxy (MBE).
Iinqanawa ze-PBN ze-semiconductors edibeneyo kunye nokusetyenzwa kwe-alloy
I-PBN Metal-Organic CVD (MOCVD) iibhodi zokugquma kunye nezangqa ze-MBE zokugquma
I-PBN i-insulation bushings yombane ye-high-temperature vacuum izixhobo
I-PBN ehamba ityhubhu yamaza (TWT) enesakhiwo esijikelezayo
Isiqalelo sohlalutyo | Iziphumo(μg/g) | Isiqalelo sohlalutyo | Iziphumo(μg/g) |
Li | <0.005 | Si | 1.7 |
F | <0.005 | CI | <0.005 |
Na | <0.005 | S | <0.005 |
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