UMBUZO
I-Silicon Nitride Substrates yokuSebenza koMbane woMbane oPhuhliweyo
2023-03-08


Power Electronics


Uninzi loyilo lwemodyuli yamandla namhlanje lusekwe kwi-ceramics eyenziwe nge-aluminium oxide (Al2O3) okanye i-AlN, kodwa njengoko iimfuno zokusebenza ziphakama, abaqulunqi bajonge kwezinye ii-substrates. Kwizicelo ze-EV, umzekelo, ilahleko zokutshintsha zehla nge-10% xa ubushushu be-chip busuka kwi-150 ° C ukuya kwi-200 ° C. Ukongeza, ubugcisa obutsha bokupakisha obufana neemodyuli ezingenazo i-solder kunye neemodyuli ezingenazintambo ezingenazintambo zenza i-substrates ekhoyo ibe yikhonkco ebuthathaka.


Enye into ebalulekileyo kukuba imveliso kufuneka ihlale ixesha elide kwiimeko ezinzima, ezifana nezo zifumaneka kwiiinjini zomoya. Ubomi obuqikelelweyo bee turbines zomoya phantsi kwazo zonke iimeko zokusingqongileyo yiminyaka elishumi elinesihlanu, ebangela ukuba abayili besi sicelo bafune ubugcisa obuphezulu be-substrate.


Ukwanda kokusetyenziswa kwamacandelo e-SiC yinto yesithathu eqhuba ezinye iindlela eziphuculweyo ze-substrate. Xa kuthelekiswa neemodyuli eziqhelekileyo, iimodyuli zokuqala ze-SiC kunye nokupakishwa ngokufanelekileyo zibonise ukunciphisa ilahleko ye-40 ukuya kwi-70 ekhulwini, kodwa kwakhona ibonise imfuneko yobuchule bokupakisha obutsha, kuquka i-substrates ye-Si3N4. Zonke ezi zindlela ziya kunciphisa umsebenzi wexesha elizayo we-Al2O3 kunye ne-AlN substrates, ngelixa i-substrates esekelwe kwi-Si3N4 iya kuba yinto ekhethiweyo kwiimodyuli zamandla ezizayo.


I-Silicon nitride (i-Si3N4) ifaneleke kakuhle kwi-substrates yamandla e-elektroniki ngenxa yamandla ayo aphezulu okugoba, ukuqina okuphezulu kwe-fracture, kunye ne-thermal conductivity ephezulu. Iimpawu ze-ceramic kunye nokuthelekiswa kwezinto eziguquguqukayo ezibalulekileyo, ezifana nokukhupha inxalenye okanye ukubunjwa kwe-crack, kunempembelelo enkulu kwindlela yokuziphatha ye-substrate yokugqibela, njengokuqhuba ukushisa kunye nokuziphatha kwebhayisikili ye-thermal.


I-Thermal conductivity, amandla okugoba, kunye nokuqina kwe-fracture zezona zinto zibalulekileyo xa ukhetha izinto zokugquma kwiimodyuli zamandla. I-conductivity ephezulu ye-thermal iyimfuneko yokutshatyalaliswa ngokukhawuleza kobushushu kwimodyuli yamandla. Amandla okugoba abalulekile kwindlela i-substrate ye-ceramic iphathwa ngayo kwaye isetyenziswe ngexesha lokupakisha, ngelixa ukuqina kwe-fracture kubalulekile ekucingeni ukuba kuya kuba njani ukuthembeka.

 

I-conductivity ephantsi ye-thermal kunye namaxabiso aphantsi omatshini abonakalisa i-Al2O3 (96%). Nangona kunjalo, i-thermal conductivity ye-24 W/mK yanele uninzi lwezicelo ezisemgangathweni zamashishini zanamhlanje. I-AlN ephezulu ye-thermal conductivity ye-180 W / mK iyona inzuzo enkulu, nangona ukuthembeka kwayo okuphakathi. Esi sisiphumo sokuqina kwe-Al2O3 yokwaphuka okuphantsi kunye namandla okugoba athelekisekayo.


Ukunyuka kwemfuno yokuxhomekeka okukhulu kukhokelele kwinkqubela phambili yamva nje kwi-ZTA (zirconia toughened alumina) iiseramikhi. Ezi ceramics zinamandla amakhulu okugoba kunye nokuqina kokwaphuka kunezinye izinto. Ngelishwa, i-thermal conductivity ye-ceramics ye-ZTA ithelekiswa neyomgangatho we-Al2O3; ngenxa yoko, ukusetyenziswa kwabo kwizicelo zamandla aphezulu kunye noxinano lwamandla aphezulu kuthintelwe.


Ngelixa i-Si3N4 idibanisa i-thermal conductivity egqwesileyo kunye nokusebenza koomatshini. I-thermal conductivity ingachazwa kwi-90 W/mK, kwaye ukuqina kwayo kokwaphuka kowona mgangatho uphezulu phakathi kweeseramikhi ezithelekisayo. Ezi mpawu zibonisa ukuba i-Si3N4 iya kubonisa ukuthembeka okuphezulu njenge-metalized substrate.


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