I-Silicon carbide (i-SiC) yimathiriyeli ye-ceramic ehlala ikhuliswa njengekristale enye kwizicelo ze-semiconductor. Ngenxa yeempawu zayo zendalo kunye nokukhula kwekristale enye, yenye yezona zinto zizinzileyo ze-semiconductor kwimarike. Oku komelela kudlulela ngaphaya kokusebenza kombane.

Ukomelela ngokwasemzimbeni

Ukuqina komzimba weSiC kubonakaliswa kakuhle ngokuphonononga izicelo zayo ezingezizo eze-elektroniki: i-sandpaper, i-extrusion dies, iipleyiti ze-bulletproof vest, iidiski ze-brake ezisebenza kakhulu, kunye nezitshizi zomlilo. I-SiC iya kukrwela into ngokuchasene nokuba izonwaya ngokwayo. Xa isetyenziswe kwiidiski ze-brake ezisebenza ngokuphezulu, ukuchasana kwabo kwixesha elide lokugqoka kwiindawo ezinzima kufakwa kuvavanyo. Ukuze isetyenziswe njengepleyiti ye-bulletproof vest, i-SiC kufuneka ibe namandla aphezulu omzimba kunye nefuthe.

Ukuzinza kweMichiza kunye noMbane

I-SiC idume ngokungazinzi kweekhemikhali; ayichatshazelwa nakweyona khemikhali inamandla, njengealkali kunye neetyuwa ezinyibilikisiweyo, nokuba ibekwe kumaqondo obushushu afikelela kuma-800 °C. Ngenxa yokuchasana nokuhlaselwa kweekhemikhali, i-SiC ayinayo i-corrosion kwaye inokumelana nemimandla enzima kuquka ukuvezwa komoya omanzi, amanzi etyuwa, kunye neentlobo zeekhemikhali.

Ngenxa ye-bandgap yayo ephezulu yamandla, i-SiC ixhathisa kakhulu ukuphazamiseka kwe-electromagnetic kunye nemiphumo eyonakalisayo yemitha. I-SiC ikwaxhathisa ngakumbi kumonakalo kumanqanaba aphezulu amandla kuneSi.

Ukunyangwa kweThermal Shock

Ukuchasana kweSiC kumothuko we-thermal lolunye uphawu olubalulekileyo. Xa into ibonakaliswe kwiqondo lobushushu eligqithisileyo, ukothuka kwe-thermal kwenzeka (oko kukuthi, xa amacandelo ahlukeneyo ento ekumaqondo obushushu ahluke kakhulu). Ngenxa yolu tshintsho lweqondo lokushisa, izinga lokwandiswa okanye ukucutha liya kuhluka phakathi kwamacandelo ahlukeneyo. Ukothuka kwe-thermal kunokubangela iifractures kwi-brittle materials, kodwa i-SiC iyaxhathisa kakhulu kwezi ziphumo. Ukuxhatshazwa kwe-thermal shock ye-SiC yisiphumo se-thermal conductivity ephezulu (350 W / m / K ye-crystal eyodwa) kunye nokwandiswa kwe-thermal ephantsi xa kuthelekiswa nobuninzi bezinto eziphathekayo ze-semiconductor.

Ii-elektroniki ze-SiC (umzekelo, ii-MOSFET kunye ne-Schottky diode) zisetyenziswa kwizicelo ezineemeko ezinobundlobongela, ezinjengee-HEV kunye nee-EV, ngenxa yokuqina kwazo. Yimathiriyeli egqwesileyo yokusetyenziswa kwizicelo ze-semiconductor ezifuna ukuqina kunye nokuthembeka ngenxa yokuqina kwayo ngokomzimba, iikhemikhali, kunye nombane.