Pyrolytike Boron Nitride Ibicuruzwa bya PBN
Pyrolytike Boron Nitride (PBN) yahimbwe nuburyo buzwi cyane bwo kubitsa imiti (CVD) aho gazi ya amoniya (NH3) hamwe na gaze ya borone nka boron trichloride (BCI3) yitwara mu ziko ryinshi rya CVD kugirango ubike PBN kumurongo ukwiye nka Pyrolytic Graphite.
PBN izwi nk'ihitamo ryiza ku itanura ry'ubushyuhe bwo hejuru hamwe n'ibikoresho by'amashanyarazi, semiconductor, hamwe na kirisiti ya microwave nka germanium (Ge), gallium arsenide (GaAs), na fosifate indium (InP) bitewe n'ubuziranenge bwayo, imiterere ya mehaniki isumba iyindi. , hamwe na fiziki ya chimique itajegajega. PBN irashobora kwihanganira 1800 ° C muri vacuum na 2000 ° C muri azote, ikabimenyesha ko ari amahitamo meza kubice bigize itanura hamwe nimiyoboro ishonga.
VGF ikomeye ni ubwoko bwubwato bwoguhuza kristu hamwe na tekinike ya vertical gradient freeze (VGF), nka GaAs, InP, CZGaP, na Ge kristu.
Imiterere itondekanye hamwe na hegitatu ya kirisiti ya kirisiti
Imiterere yihariye perpendicular kumurongo wibanze wa kristu
Ihame ryimiterere na fiziki ya chimique
Imiterere ya Anisotropic
Ubushyuhe bukabije
Kudatose
Ntabwo ari uburozi
Umusaraba wo gukura kwa semiconductor kristal
Imiyoboro ya Wave kuri RF na microwave
Windows ikurikiza imirasire ya microwave
Imashanyarazi
PBN ifite imiterere yihariye hamwe nuburyo buhanitse hamwe na fiziki ya chimique irashobora kuba amahitamo meza nka:
PBN ibamba kubikorwa bya Vertical Gradient Freezing (VGF)
PBN ibamba kubikorwa bya Liquid Encapsulation Czochralski (LEC)
Ibikoresho bya PBN kubikorwa bya Molecular Beam Epitaxy (MBE)
Ubwato bwa PBN kubice bya semiconductor hamwe no gutunganya amavuta
PBN Metal-Organic CVD (MOCVD) imbaho zokwirinda hamwe nimpeta ya MBE
PBN amashanyarazi yimashanyarazi kubushyuhe bwo hejuru
PBN ingendo yumurongo (TWT) hamwe nuburyo buzenguruka
Ikintu Cyisesengura | Ibisubizo (μg / g) | Ikintu Cyisesengura | Ibisubizo (μg / g) |
Li | <0.005 | Si | 1.7 |
F | <0.005 | CI | <0.005 |
Na | <0.005 | S | <0.005 |
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