Pyrolytic Boron Nitride Samfuran PBN
Pyrolytic Boron Nitride (PBN) an ƙirƙira shi ta hanyar sanannen tsari na Chemical Vapor Deposition (CVD) wanda iskar ammonia (NH3) da gaseous boron halide irin su boron trichloride (BCI3) ke amsawa a cikin tanderun CVD mai zafi don ajiya. PBN akan madaidaicin madauri kamar Pyrolytic Graphite.
An san PBN a matsayin kyakkyawan zaɓi don tanderun zafin jiki da kayan aikin lantarki, semiconductor, da lu'ulu'u na microwave kamar germanium (Ge), gallium arsenide (GaAs), da indium phosphate (InP) saboda tsabtar sa na ciki, ingantaccen kayan aikin injiniya. , da kwanciyar hankali na physicochemical. PBN na iya jurewa a 1800°C a cikin injina da 2000°C a cikin nitrogen, yana gabatar da shi azaman zaɓi mai kyau don abubuwan tanderu da tasoshin narkewa.
VGF crucible wani nau'in jirgin ruwa ne don haɗa lu'ulu'u tare da dabarar daskarewar gradient (VGF), kamar GaAs, InP, CZGaP, da Ge crystal.
Tsarin da aka yi da shi tare da lattice crystal hexagonal
Musamman kaddarorin perpendicular zuwa basal jirgin sama na crystal
Mafi girman tsarin da kwanciyar hankali na physicochemical
Anisotropic tsarin
High thermal kwanciyar hankali
Rashin jika
Mara guba
Crucibles don haɓakar lu'ulu'u na semiconductor
Wave tube don RF da microwave
Windows da ke ƙarƙashin hasken microwave
Insulator na lantarki
PBN tare da musamman kaddarorin da babban tsarin da kwanciyar hankali na physicochemical na iya zama mafi kyawun zaɓi kamar:
PBN crucibles don tsarin daskarewa a tsaye (VGF).
PBN crucibles don tsarin Liquid Encapsulation Czochralski (LEC).
Kwantenan PBN don tsarin Molecular Beam Epitaxy (MBE).
Jiragen ruwan PBN na mahaɗan semiconductor da sarrafa gami
PBN Metal-Organic CVD (MOCVD) allunan rufi da zoben rufi na MBE
PBN lantarki rufi bushings ga high-zazzabi injin kayan aiki
PBN balaguron igiyar ruwa (TWT) tare da tsarin karkace
Abubuwan Nazari | Sakamako (μg/g) | Abubuwan Nazari | Sakamako (μg/g) |
Li | <0.005 | Si | 1.7 |
F | <0.005 | CI | <0.005 |
Na | <0.005 | S | <0.005 |
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