Aluminum Nitride (AlN) an fara haɗa shi ne a cikin 1877, amma yuwuwar aikace-aikacen sa a cikin microelectronics bai haifar da haɓaka ingantaccen inganci, kayan kasuwanci ba har zuwa tsakiyar 1980s.
AIN nau'i ne na nitrate aluminum. Aluminum nitride ya bambanta da aluminum nitrate a cikin cewa shi ne nitrogen fili tare da wani takamaiman yanayin oxygenation na -3, yayin da nitrate yana nufin kowane ester ko gishiri na nitric acid. Tsarin crystal na wannan abu shine wurtzite hexagonal.
Haɗin AIN
Ana samar da AlN ta hanyar rage ragewar alumina ko kuma nitridation na aluminum kai tsaye. Yana da yawa na 3.33 g/cm3 kuma, duk da rashin narkewa, yana rabuwa a yanayin zafi sama da 2500 °C da matsa lamba na yanayi. Ba tare da taimakon abubuwan da ke haifar da ruwa ba, kayan yana da alaƙa da haɗin gwiwa da juriya ga sintering. Yawanci, oxides irin su Y2O3 ko CaO suna ba da izinin rarrabuwa a yanayin zafi tsakanin 1600 zuwa 1900 digiri Celsius.
Za a iya kera sassan da aka yi da nitride na aluminium ta hanyoyi daban-daban, gami da matsi na isostatic mai sanyi, gyare-gyaren yumbura, gyare-gyaren allura mai ƙarancin ƙarfi, simintin tef, mashin ɗin daidaici, da busassun latsawa.
Mabuɗin Siffofin
AlN ba shi da kariya ga mafi yawan narkakkun karafa, gami da aluminum, lithium, da jan karfe. Yana da wuya ga yawancin narkakken gishiri, ciki har da chlorides da cryolite.
Aluminum nitride yana da babban ƙarfin wutar lantarki (170 W / mk, 200 W / mk, da 230 W / mk) da kuma babban ƙarfin juriya da ƙarfin dielectric.
Yana da saukin kamuwa da hydrolysis a cikin foda lokacin da aka fallasa shi zuwa ruwa ko zafi. Bugu da ƙari, acid da alkalis suna kai hari ga aluminum nitride.
Wannan abu shine insulator don wutar lantarki. Doping yana haɓaka ƙarfin lantarki na abu. AIN yana nuna kaddarorin lantarki.
Aikace-aikace
Microelectronics
Siffa mafi ban mamaki na AlN ita ce haɓakar yanayin zafi, wanda shine na biyu kawai ga beryllium tsakanin kayan yumbu. A yanayin zafi ƙasa da ma'aunin Celsius 200, yanayin zafinsa ya zarce na jan ƙarfe. Wannan haɗin haɓaka mai girma, ƙarfin juriya, da ƙarfin dielectric yana ba da damar yin amfani da shi azaman marufi da marufi don babban iko ko babban taro microelectronic bangaren. Bukatar watsar da zafi ta hanyar asarar ohmic da kuma kula da abubuwan da ke cikin kewayon zafin aikin su yana ɗaya daga cikin abubuwan iyakancewa waɗanda ke ƙayyadad da yawan tattara kayan lantarki. AlN substrates suna samar da mafi inganci sanyaya fiye da na al'ada da sauran yumbura, wanda shine dalilin da ya sa ake amfani da su azaman masu ɗaukar guntu da magudanar zafi.
Aluminum nitride yana samun aikace-aikacen kasuwanci da yawa a cikin matatun RF don na'urorin sadarwar hannu. Layer na aluminum nitride yana tsakanin nau'ikan karfe biyu. Aikace-aikace na gama gari a cikin ɓangaren kasuwanci sun haɗa da rufin lantarki da abubuwan sarrafa zafi a cikin lasers, chiplets, collets, insulators na lantarki, manne zobe a cikin kayan sarrafa semiconductor, da marufi na na'urar microwave.
Sauran Aikace-aikace
Sakamakon kashe kuɗin AlN, aikace-aikacen sa a tarihi sun iyakance ga aikin jiragen sama na soja da filayen sufuri. Duk da haka, an yi nazarin abubuwan da yawa kuma an yi amfani da su a fannoni daban-daban. Abubuwan da ke da fa'ida sun sa ya dace da yawancin aikace-aikacen masana'antu masu mahimmanci.
Aikace-aikacen masana'antu na AlN sun haɗa da abubuwan da aka haɗa don sarrafa karafa masu ƙarfi da ingantaccen tsarin musayar zafi.
Ana amfani da wannan kayan don gina crucibles don haɓakar lu'ulu'u na gallium arsenide kuma ana amfani dashi a cikin samar da ƙarfe da semiconductor.
Sauran abubuwan amfani da nitride na aluminium sun haɗa da azaman firikwensin sinadarai don iskar gas mai guba. Yin amfani da AIN nanotubes don samar da nanotubes masu girman kai-daya don amfani a cikin waɗannan na'urori ya kasance batun bincike. A cikin shekaru ashirin da suka gabata, an kuma bincika diodes masu fitar da haske waɗanda ke aiki a cikin bakan ultraviolet. An kimanta aikace-aikacen siraren-fim AIN a cikin firikwensin sautin raƙuman ruwa na saman.
