Silicon carbide (SiC) abu ne na yumbu wanda ake yawan girma azaman kristal guda ɗaya don aikace-aikacen semiconductor. Saboda kaddarorin kayan sa na asali da ci gaban-crystal guda ɗaya, yana ɗaya daga cikin mafi ɗorewa kayan semiconductor akan kasuwa. Wannan dorewa ya wuce nisa fiye da aikin sa na lantarki.
Dorewar Jiki
An kwatanta ƙarfin ƙarfin jiki na SiC mafi kyau ta hanyar nazarin aikace-aikacen sa na lantarki: takarda sandpaper, extrusion ya mutu, faranti mai hana harsashi, fayafai masu girman aiki, da masu kunna wuta. SiC za ta taso wani abu sabanin yadda ake tozarta kanta. Lokacin da aka yi amfani da su a cikin faifan birki masu ƙarfi, ana gwada juriyarsu ga lalacewa na dogon lokaci a cikin yanayi mara kyau. Don amfani azaman farantin rigar rigar harsashi, SiC dole ne ya mallaki duka ƙarfin jiki da ƙarfi duka.
Tsawon Sinadari da Wutar Lantarki
SiC ya shahara saboda rashin kuzarin sinadarai; Hatta sinadarai masu tsauri, irin su alkalis da narkakken gishiri ba su shafe shi, ko da a lokacin da yanayin zafi ya kai 800 ° C. Saboda juriya ga harin sinadarai, SiC ba mai lalacewa ba ce kuma tana iya jure wa yanayi mai tsauri gami da fallasa iskar ɗanshi, ruwan gishiri, da sinadarai iri-iri.
Sakamakon babban bandgap ɗin makamashinsa, SiC yana da matukar juriya ga hargitsi na lantarki da kuma ɓarnar tasirin radiation. SiC kuma yana da juriya ga lalacewa a manyan matakan iko fiye da Si.
Juriya Shock Thermal
Juriyar SiC ga girgizar zafi wata muhimmiyar sifa ce. Lokacin da wani abu ya gamu da matsanancin zafin jiki, girgizar zafin jiki na faruwa (watau lokacin da sassa daban-daban na abu suke cikin yanayin zafi daban-daban). Sakamakon wannan yanayin zafin jiki, ƙimar faɗaɗawa ko raguwa zai bambanta tsakanin sassa daban-daban. Girgizawar zafi na iya haifar da karaya a cikin kayan da ba su da ƙarfi, amma SiC yana da juriya sosai ga waɗannan tasirin. Juriya na girgiza zafin zafi na SiC shine sakamakon haɓakar yanayin zafi mai girma (350 W/m/K don kristal guda ɗaya) da ƙarancin haɓakar zafi idan aka kwatanta da mafi yawan kayan semiconductor.
Ana amfani da kayan lantarki na SiC (misali, MOSFETs da Schottky diodes) a aikace-aikace tare da mahalli masu tsauri, kamar HEVs da EVs, saboda dorewarsu. Kyakkyawan abu ne don amfani a aikace-aikacen semiconductor wanda ke buƙatar ƙarfi da dogaro saboda juriyarsa ta jiki, sinadarai, da lantarki.
